Data storage system with complex memory and method of operating the same

a data storage system and complex memory technology, applied in the field of data storage systems with complex memory comprising a, can solve the problems of slow writing and erasing speed of data storage systems using flash memory devices, and relatively slow erasing operation, so as to reduce the number of writing, increase the writing speed, and reduce the size of the buffer

Inactive Publication Date: 2009-06-04
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0015] The present invention provides a data storage system with a complex memory that has an increased writing speed realized by managing only data which will be frequently updated in a writing buffer taking advantage of spatial locality and can reduce the number of writing and erasing operations for the flash memory that is an advantage obtained by using the buffer while reducing the size of the buffer.

Problems solved by technology

While reading speed of the data storage system using a flash memory device is fast, writing and erasing speeds thereof are slow.
That is, for the NAND-type memory device, the erasing operation is relatively slow.
That is, the writing speed of data storage systems using the flash memory device is far slower than that of the RAM device.
In addition, a data storage system using a flash memory device cannot perform real-time data storing operation.
Thus, there are limitations in using the data storage systems using a flash memory device in a digital product such as a digital camera or a digital camcorder.
However, even when the erasing operation is hidden using the FTL, the writing speed of flash memory devices are still slow compared to RAM devices.
Particularly, flash memory devices are very limited in being used in a device such as the digital camera, camcorder and mobile phone that process and store data in real-time.
However, when the writing operation is done only in the cash, the data may be erased if power is turned off before the data is stored in the flash memory device.
That is, the data maintenance that is a basic condition of the data storage system cannot be ensured.
Therefore, although the reading performance is improved, the an ideal writing performance is not yet satisfied.
This leads to a deterioration of the writing performance.

Method used

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  • Data storage system with complex memory and method of operating the same
  • Data storage system with complex memory and method of operating the same
  • Data storage system with complex memory and method of operating the same

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Embodiment Construction

[0066] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown.

[0067]FIG. 1 is a block diagram of a data storage system (hereinafter, referred as “first system”) having a complex memory according to an embodiment of the present invention.

[0068] Referring to FIG. 1, the first system includes a host unit 40, a storage unit 44 and a first I / O (input / output) bus 42. The first I / O bus 42 functions as an interface between the host unit 40 and the storage unit 44. The host unit 40 is a computer main body in which a file system 40a is equipped. The storage unit 44 includes a flash translation layer 44a, a non-volatile buffer unit 44b, a second I / O bus 44c, and a flash memory unit 44d. The flash translation layer 44a is provided in the form of hardware, which can identify data and a location where the data is recorded in the flash memory 44d, perform the erasing operation, and identify dat...

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Abstract

A data storage system and a data storing method for the data storage system are provided. The data storage system includes a host unit, a storage unit, and a first input / output bus functioning as an interface between the host unit and the storage unit. The storage unit includes a non-volatile memory buffer unit and a flash memory unit. The non-volatile memory buffer unit includes a plurality of buffers arranged in parallel. The flash memory unit includes a plurality of data storage devices arranged in parallel to input and output data using a parallel method. In the method, a writing request is first classified into one of a plurality of grades according to a writing request frequency when there is a writing request and the writing requested data is stored in one of the non-volatile memory buffer unit and the flash memory unit according to the writing request frequency.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION [0001] This application claims the benefit of Korean Patent Application No. 10-2005-0063301, filed on Jul. 13, 2005, and Korean Patent Application No. 10-2005-0076368, filed on Aug. 19, 2005 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a data storage system and method of operating the same, and more particularly, to a data storage system with a complex memory comprising a flash memory and a method of operating the data storage system. [0004] 2. Description of the Related Art [0005] Data storage systems using a flash memory device have been widely used in an embedded system and a mobile system. The data storage system using a flash memory device is one of electrically erasable programmable read-only memories (EEPROMs) on and from which the data can be written, read...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G06F12/00
CPCG06F12/0246G11C2211/5641G06F2212/7203G06F12/122G06F12/00G06F13/14
Inventor YIM, KEUNSOOYOO, JEONGJOONPARK, JUNGKEUN
Owner SAMSUNG ELECTRONICS CO LTD
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