Method of manufacturing an integrated circuit
a manufacturing method and integrated circuit technology, applied in the direction of electrical equipment, semiconductor devices, semiconductor/solid-state device details, etc., can solve the problems of deterioration of adhesion, high reactivity of amorphous silicon, and failure to meet reliability requirements of electrically conductive layers to the substrate, etc., to prevent damage to the amorphous silicon layer, the effect of deteriorating the adhesion
Active Publication Date: 2009-10-29
AMPLEON NETHERLANDS
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- Description
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Benefits of technology
[0004]It is therefore an object of the invention to provide a method which allows good adhesion.
Problems solved by technology
It has been found in experiments that the adhesion of the electrically conductive layer to the substrate does not always meets the reliability requirements.
Adhesion is known to be an issue in industrialisation of new semiconductor processes.
Good adhesion is in other words an engineering challenge.
Such damage may occur if it reacts.
This may cause so-called Kirkendall voiding, which deteriorates the adhesion.
Method used
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[0024]FIG. 1 shows in a cross-sectional view a first embodiment of the assembly 200 with the passive IC 100 of the invention. This passive IC 100 comprises a first side 101 and a second side 102 and is provided with an interconnection substrate 140 of semiconductor material. The substrate 140 comprises vertical interconnects 130 extending from the first side 101 to the second side 102. The passive IC 100 is attached with its second side 102 to a first side 151 of a carrier substrate 150 with an adhesive 105. Bond wires 90 extend from bond pads 95 on the passive IC 100 to corresponding bond pads 155 on the carrier substrate 150. Electrical vertical interconnects 160 extend through the carrier substrate 150 to terminals 170 on a second side 152 of the carrier substrate 150, facing away from the first side 151. Thermal vertical interconnects 161 extend to at least one thermal terminal 171 at the second side. The carrier substrate 150 further contains one or more inductors 158, which ar...
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An integrated circuit (100) is provided that comprises a substrate (140) of silicon and an interconnect (130) in a through-hole extending from the first to the second side of the substrate. The interconnect is coupled to a metallisation layer (120) on the first side of the substrate and is provided on an amorphous silicon layer that is present at a side wall of the through-hole, and particularly at an edge thereof adjacent to the first side of the substrate. The interconnect comprises a metal stack of nickel and silver. A preferred way of forming the amorphous silicon layer is a sputter etching technique.
Description
FIELD OF THE INVENTION[0001]The invention relates to a method of manufacturing an integrated circuit comprising a substrate of semiconductor material with a first and an opposite second side, comprising the steps of (1) providing a metallisation layer on the first side of the substrate; (2) forming a through-hole extending from the first to the second side of the substrate, and (3) providing a sidewall of the through-hole with an electrically conductive layer to form an interconnect coupled to the metallisation layer on the first side of the substrate.[0002]The invention further relates to an integrated circuit thus formed. Silicon substrates are increasingly used as carriers for integrated circuits. In order to provide an adequate grounding, through-holes are formed and at least partially filled with conductive material to form interconnects. While this is particularly needed to increase performance at RF frequencies, the interconnects allow efficient exposure of contacts.BACKGROUN...
Claims
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Login to View More IPC IPC(8): H01L23/522H01L21/768H01L23/48
CPCH01L21/486H01L2924/0132H01L24/32H01L2224/16145H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2924/0101H01L2924/01012H01L2924/01013H01L2924/01018H01L2924/01029H01L2924/01033H01L2924/01046H01L2924/01047H01L2924/01078H01L2924/01079H01L2924/01082H01L2924/04941H01L2924/10158H01L2924/14H01L2924/19041H01L2924/30107H01L2924/3011H01L2924/3025H01L21/76898H01L2924/1461H01L2924/01005H01L2924/01006H01L2924/01019H01L2924/01023H01L2924/01042H01L2924/01074H01L2924/00014H01L2924/00012H01L2924/01014H01L2924/3512H01L2924/00H01L2224/45099H01L24/73H01L2924/00011H01L2924/181H01L2224/0401
InventorMOREL, STEPHANEDEN DEKKER, ARNOLDUSRODENBURG, ELISABETH C.VAN GRUNSVEN, ERIC C. E.
OwnerAMPLEON NETHERLANDS