Device and device manufacture method
a manufacturing method and technology of a device, applied in the direction of layered products, printing, chemistry apparatus and processes, etc., can solve the problems of deteriorating affecting the performance and reliability of the device, and unable to provide sufficient physical properties of the bonding interface, etc., to achieve excellent optical transmission characteristics, prevent damage, and improve the effect of bonding strength
Inactive Publication Date: 2010-11-04
MITSUBISHI HEAVY IND LTD +1
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- Abstract
- Description
- Claims
- Application Information
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Benefits of technology
[0014]As stated above, it is difficult to bond SiO2 base material with a practical bonding strength only by the surface activation and pressure application. It is effective to provide metal or the like on the bonding interface as the bonding functional intermediate layer which causes bonding strength so as to obtain the practical bonding strength.
[0016]It is an object of the present invention to provide a device and device manufacture method which are capable of room-temperature bonding of a SiO2 base material substrate with a practical bonding strength and excellent in optical transmission characteristics.
[0017]It is another object of the present invention to provide a device and a device manufacture method which are capable of preventing damage and lessening layout restrictions.
[0018]A device according to the present invention includes: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate, and functioning to cause a practical bonding strength. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. At this time, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate. Such a device allows ensuring a practical bonding strength for bonding the first substrate to the second substrate, ensuring excellent optical transmission through the bonding interface, and arranging the bonding interface in a region transmitted by light. Therefore, such a device can relax restrictions on the layout related to the bonding interface, make the layout diversified, and make manufacturing process more diversified.
Problems solved by technology
As stated above, it is difficult to bond SiO2 base material with a practical bonding strength only by the surface activation and pressure application.
However, the method using the metal as the bonding functional intermediate layer is a technique which is only directed to the occurrence of the bonding strength and cannot sufficiently provide other bonding interface physical properties such as optical transparency.
Such optical attenuation possibly deteriorates the performance and reliability of a device such as the optical MEMS device required to have optical transparency, and therefore this approach is not appropriate as a device manufacture method.
On the other hand, the room-temperature bonding method is a method for which the bonding property largely depends on physical properties of materials to be bonded, and it is impossible to realize both the bonding strength and the optical transmission characteristics simply by using another material for the bonding functional intermediate layer.
Method used
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Embodiment Construction
[0036]Embodiments of a device according to the present invention will be described with reference to the drawings. The device is manufactured using a room-temperature bonding apparatus. The room-temperature bonding apparatus 1 includes a bonding chamber 2, an ion gun 3, an upper stage 5, and a lower stage 6 as shown in FIG. 1.
[0037]The bonding chamber 2 is a container having the interior sealed from the environment and made of stainless steel. The bonding chamber 2 also includes a vacuum pump and a cover which are not shown. The vacuum pump evacuates gas from the interior of the bonding chamber 2. Examples of the vacuum pump include a turbo molecular pump evacuating the gas by causing a plurality of internal metal blades to flick away molecules of the gas. The cover closes or opens a gate connecting the exterior to the interior of the bonding chamber 2.
[0038]The upper stage 5 is made of stainless steel, formed into a cylindrical shape, and supported to allow a parallel shift in the ...
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Abstract
A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
Description
TECHNICAL FIELD[0001]The present invention relates to a device and a device manufacture method, particularly to a device using light and a method of manufacturing the device.BACKGROUND ART[0002]Photo detectors such as optical sensors, light-emitting devices such as LEDs, and optical signal transmission devices such as optical switches are used as light-based devices (so-called optical devices), in every field of industries. Among these, applications of solid-state imaging devices such as CCDs and CMOS image sensors manufactured by applying a semiconductor microfabrication technique have been increasingly enhanced. Furthermore, development and application of optical MEMS devices having functions of these optical devices incorporated in a micro machine element are rapidly underway. To optical MEMS devices of this type, not only a Si substrate for which a microfabrication technique has been established but also materials having high light transmission, particularly SiO2 materials (such...
Claims
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IPC IPC(8): H01L33/48H01L31/02B32B38/00H10N30/20
CPCH01L24/75H01L21/2007H01L2924/1461H01L2924/12041H01L2924/014H01L2924/01072H01L2924/01006H01L24/28H01L24/31H01L24/83H01L31/0203H01L2224/83099H01L2224/8385H01L2224/83894H01L2924/01012H01L2924/01013H01L2924/01015H01L2924/01018H01L2924/0102H01L2924/01033H01L2924/0104H01L2924/0105H01L2924/01051H01L2924/01082H01L2924/04941H01L2924/07802H01L2924/3512H01L2924/00H01L2924/12042C03C27/06H01L33/0093
InventorUTSUMI, JUNGOTO, TAKAYUKIIDE, KENSUKETAKAGI, HIDEKIFUNAYAMA, MASAHIRO
OwnerMITSUBISHI HEAVY IND LTD