Light emitting diode element and method for fabricating the same
a technology of light-emitting diodes and diodes, which is applied in the direction of basic electric elements, electrical equipment, semiconductor devices, etc., can solve the problems of reduced probability that light leaves a semiconductor, photons can only be totally reflected inside a chip, and led usually has insufficient light efficiency, so as to reduce the probability of total internal reflection and reduce the cost. , the effect of promoting the light extraction efficiency of led
Inactive Publication Date: 2010-11-25
LIN HUNG CHENG +2
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Benefits of technology
"The present invention provides a method for fabricating a LED element without using any mechanical fabrication process or secondary epitaxial process. The method involves etching a substrate to form basins with inclined natural crystal planes and a bottom plane, and pattern-etching the bottom plane to form a rugged surface. An LED structure is then formed on the bottom plane by epitaxially growing layers. The LED element obtained using this method has improved light extraction efficiency and can be used in various applications such as lighting and displays."
Problems solved by technology
Besides, the parallel faces of a parallelepiped decrease the probability that light leaves a semiconductor from an interface.
Thus, photons can only be totally reflected inside a chip until they are completely absorbed and converted into heat.
Therefore, LED usually has insufficient light efficiency.
However, the technology of TIP LED can only apply to red light AlGaInP / GaP LED chips.
A gallium nitride (GaN) LED is epitaxially grown on a sapphire substrate, which is very hard to mechanically fabricate.
Therefore, the TIP LED technology cannot apply to GaN LED.
Therefore, this technology is hard to commercialize.
However, it has the disadvantages of needing two epitaxial processes, which make LED fabrication more complicated.
Method used
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[0020]The technical contents of the present invention are to be described in detail with embodiments. However, these embodiments are only to demonstrate the present invention but not to limit the scope of the present invention.
[0021]The present invention utilizes an etching technology to form basins with inclined natural crystal planes on a substrate. Epitaxial layers of LED are selectively grown in the basins to form an LED with several inclined planes. Thereby, a high light-extraction efficiency LED is achieved.
[0022]Refer to from FIG. 1A to FIG. 1E diagrams schematically showing the process of a method according to the present invention. The method of the present invention comprises the following steps:
[0023](a) providing a substrate 100, forming a passivation layer 110 on the substrate 100 and defining a plurality of polygonal etch areas 111, as shown in FIG. 1A, wherein the substrate 100 may be made of sapphire, silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs) or al...
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The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.
Description
CROSS REFERENCE TO RELATED APPLICATION[0001]This application is a Divisional of co-pending application Ser. No. 11 / 961,478, filed on Dec. 20, 2007, and for which priority is claimed under 35 U.S.C. §120, the entire contents of which are hereby incorporated by reference.FIELD OF THE INVENTION[0002]The present invention relates to a light emitting diode element and a method for fabricating the same, particularly to a high light-extraction efficiency light emitting diode element and a method for fabricating the same.BACKGROUND OF THE INVENTION[0003]Traditionally, a light emitting diode (LED) is fabricated into a parallelepiped shape. An LED usually has a small total reflection critical angle because there is a great difference between the refractive indexes of a semiconductor and a packaging material. The light generated by LED reaching an interface by an angle greater than the total reflection critical angle will be totally reflected back to the interior of the LED chip. Besides, the ...
Claims
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IPC IPC(8): H01L33/04H01L33/02H01L33/30H01L33/10H01L33/20
CPCH01L33/20H01L33/10
Inventor LIN, HUNG-CHENGLEE, CHIA-MINGCHYI, JEN-INN
Owner LIN HUNG CHENG