Laser module, control method of the same, control data of the same, and control data generation method
a semiconductor laser module and control method technology, applied in the direction of electromagnetic transmission, semiconductor lasers, transmission, etc., can solve the problems of inability to achieve the desired optical output intensity, the inability to use beam splitters, and the inability to achieve high-quality optical communication with semiconductor laser modules
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first embodiment
[0050]A semiconductor module in accordance with a first embodiment of the present invention will be exemplarily described. The semiconductor module in accordance with the first embodiment of the present invention has a wavelength locker that monitors a monitor optical intensity in the rear side (the opposite side of the optical output side) of the semiconductor laser. FIG. 5 is a block diagram of the semiconductor laser in accordance with the first embodiment of the present invention. There are additionally provided a temperature detecting element 22, a first correction table 34, and a transmitting and receiving mechanism between the first correction table 34 and the output controller 20. The temperature detecting element 22 detects the functionality of the output controller 20 and temperature of the output optical system 12. Hereinafter, in the first embodiment, the same components and configurations as those of the conventional art have the same reference numerals. That is to say,...
second embodiment
[0074]A second embodiment of the present invention exemplarily describes an improved one in accordance with the first embodiment of the present invention. In the first embodiment, the optical output intensity has to be corrected due to the change in the temperature, because there exists the problem described below.
[0075]FIG. 9 schematically shows the relationship between the drive current and the wavelength (namely, temperature), obtained in advance before the optical output intensity is corrected by the temperature information (namely, the conventional art). The continuous line indicates the optical output intensity obtained before correction, the long dashed line indicates the drive current before correction, and the short dashed line indicates the desired optical output intensity. Referring now to FIG. 10, when the temperature is changed (as indicated by an arrow in a lateral direction) in order to obtain a desired wavelength, the optical output intensity changes (for example, de...
third embodiment
[0096]A third embodiment of the present invention exemplarily describes a semiconductor laser module having a wavelength locker that monitors the monitor optical intensity on the front side (optical output side) of the semiconductor laser. FIG. 18 is a block diagram of the semiconductor laser module in accordance with a third embodiment of the present invention. The light receiving element 16 receives the light emitted to the front side. Except the light receiving element 16, hereinafter, in the third embodiment, the same components and configurations as those of the first embodiment have the same reference numerals. The beam emitted from the semiconductor laser 10 passes through a beam splitter 14a, and further passes through the output optical system 12, and is externally output as the optical output intensity 50.
[0097]The beam split by the beam splitter 14a passes through another beam splitter 14b and is split into two. One of such split beam reaches the light receiving element 1...
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