Polymeric based and surface treated metallic hybrid materials and fabrication methods thereof
a hybrid material and polymer technology, applied in the direction of impression caps, dental prostheses, prostheses, etc., can solve the problems of stress shielding, stress shielding effect, bone loss around the implant, etc., and achieve poor biocompatibility, poor bulk mechanical properties, and rapid degradation
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example 1
Plasma Immersion Ion Implantation (PIII)
[0039]One of the surface modification methods can be PIII, and the implantation sources that can be used include nitrogen (N2), oxygen (O2), carbon (C), ammonia (NH3), aluminum (Al), zirconium (Zr), iron (Fe), silicon (Si), strontium (Sr), calcium (Ca), and water. Table 1 shows implantation conditions for the implantation sources of nitrogen, water, and strontium. All values listed will work with slight variations, such that each value should be interpreted as having the word “about” in front of it.
TABLE 1Implantation conditions for PIII for selected implantation sourcesSourcesParametersNitrogen (N2)Water (H2O)Strontium (Sr)Base Pressure7.0 × 10−6 Torr7.0 × 10−6 Torr7.0 × 10−6 TorrWorking Voltage40 kV40 kV15 kVPulse Width30 μs30 μs30 μsImplantation Time4 hrs4 hrs3 hrsFrequency200 Hz200 Hz200 HzWorking Pressure5.0 × 10−4 Torr6.0 × 10−4 Torr6.4 × 10−4 Torr
example 2
Plasma Immersion Ion Implantation and Deposition (PIII & D)
[0040]Apart from PIII, PIII together with deposition can be used as another surface treatment technique. Similar to PIII, different sources such as nitrogen (N2), oxygen (O2), carbon (C), ammonia (NH3), aluminum (Al), zirconium (Zr), iron (Fe), silicon (Si), strontium (Sr), calcium (Ca), and / or water can be used for PIII & D. Table 2 shows the working parameters for implanting and depositing Al and O2 at the same time. All values listed will work with slight variations, such that each value could be interpreted as having the word “about” in front of it.
TABLE 2Implantation and deposition conditions for implanting and depositingAl and O2 to form Al2O3Negative High Voltage Power SupplyNH Current1.0 mANH Voltage15 kVPulse Duration300 μsFrequency10 HzPulsed Filtered Cathodic Arc SourceArc Current0.1 AArc Voltage92 VTriggering Voltage12.6 kVCoil Current2.3 APulse Duration250 μsFrequency10 HzOxygen Flow10 sccm
example 3
Magnetron Sputtering
[0041]Magnetron sputtering can be used for a surface treatment process according to an embodiment of the subject invention. The sputtering source can be, for example, aluminum oxide (Al2O3). Tables 3 shows the process conditions during the magnetron sputtering process. All values listed will work with slight variations, such that each value could be interpreted as having the word “about” in front of it.
TABLE 3Process conditions of magnetron sputteringFrequency40 kHz-60 kHzVoltage100-1000 VCurrent0.1-1 A
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