Showerhead apparatus for a linear batch chemical vapor deposition system

Abstract

A showerhead apparatus for a linear batch CVD system includes a movable showerhead, one or more gas supply conduits, and a translation mechanism. Each gas supply conduit provides a precursor gas to the showerhead. The showerhead includes conduits and channels arranged along the length of the showerhead to distribute precursor gas to the surfaces of substrates. The small distance between the substrates and the showerhead limits precursor gas flows from the channels to a small portion of each substrate beneath the showerhead. During a deposition process run, the translation mechanism causes the showerhead to move back and forth over the substrates along a direction perpendicular to a linear arrangement of the substrates. Parasitic deposition within the deposition chamber is substantially reduced in comparison to conventional showerhead apparatus. The ability to accurately control the precursor gas flows and the motion of the showerhead allows for improved thickness uniformity and device yield.

Description

RELATED APPLICATION[0001]This application is a continuation-in-part application of U.S. patent application Ser. No. 12 / 787,082, titled “Linear Batch Chemical Vapor Deposition System” and filed May 25, 2010.FIELD OF THE INVENTION[0002]The invention relates generally to a system and method for chemical vapor deposition. More particularly, the invention relates to a chemical vapor deposition system having a showerhead apparatus for linear batch processing of substrates.BACKGROUND OF THE INVENTION[0003]Chemical vapor deposition (CVD) is a process frequently used to deposit semiconductor, dielectric, metallic and other thin films onto a surface of a substrate. In one common CVD technique, one or more precursor molecules, each in a gas phase, are introduced into a process chamber that includes the substrate. The reaction of these precursor gases at the surface of the substrate is initiated or enhanced by adding energy. For example, energy can be added by increasing the surface temperature...

AI Technical Summary

Benefits of technology

The invention is a showerhead apparatus that includes a showerhead, gas supply conduits, and a translation mechanism. The showerhead has a conduit to conduct a precursor gas along its length, with at least one opening to supply the gas to the showerhead. The gas supply conduits are connected at opposite ends, and the translation mechanism is connected to the showerhead and is configured to move it forwards and backwards. The apparatus also includes a movable showerhead body with a conduit for a precursor gas, a channel parallel to its length, and an opening to supply the gas. The translation mechanism is connected to the movable showerhead body and is configured to move it. The apparatus also includes a stationary showerhead body with a conduit for a precursor gas and openings to supply the gas. The translation mechanism is connected to the stationary showerhead body. The technical effects include a better, more complete shower experience, with improved gas distribution and utilization.

Problems solved by technology

Non-uniform gas near the substrate surface can yield unsatisfactory film uniformity and can lead to shadowing artifacts due to features on the surface, such as steps and vias.

High volume processing of wafers and other substrates is limited by known systems and methods for CVD processing.

Complex rotational mechanisms are often employed and the size of conventional reaction chambers limits the number of substrates per CVD process batch.

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