Semiconductor memory device and method of manufacturing the same

Abstract

The present technology includes a semiconductor memory device, including a channel layer and interlayer insulation layers surrounding the channel layer. The interlayer insulation layers are stacked with a trench interposed therebetween. A seed pattern is formed on a surface of the trench and a metal layer is formed on the seed pattern in the trench.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is based on and claims priority from Korean Patent Application No. 10-2012-0137804, filed on Nov. 30, 2012, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND[0002]1. Field[0003]The present invention relates to a semiconductor memory device and a method of manufacturing the same, and more particularly, to a semiconductor memory device including alternately stacked Insulation layers and conductive layers, and a method of manufacturing the semiconductor memory device,[0004]2. Discussion of Related Art[0005]Various technologies capable of improving a degree of integration have been developed in a field of a semiconductor memory device. A 3D semiconductor memory device in which memory cells are three-dimensionally arranged on a substrate has been suggested as one of the technologies suggested for improvement of a degree of integration.[0006]FIGS....

AI Technical Summary

Benefits of technology

The present invention aims to improve the manufacturing process of a semiconductor memory device by making it more difficult. The method of manufacturing the semiconductor memory device is also provided. This invention helps to make the device more challenging to create, but improves its overall quality and efficiency.

Problems solved by technology

Further, an etching thickness may be non-uniform for each region during a process of etching the conductive layer 51.

Due to the aforementioned problems, a level of difficulty of manufacturing a structure in which insulation layers and conductive layers are alternately stacked is increased.

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