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Semiconductor device

a technology of semiconductor devices and power devices, applied in the direction of semiconductor devices, semiconductor/solid-state device details, ceramics, etc., can solve the problems of high labor and cost, inability to maintain the durability of semiconductor devices, and inability to meet the needs of power devices, so as to achieve the effect of maintaining durability

Active Publication Date: 2017-08-17
NAPRA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The semiconductor device maintains durability and performance at high temperatures, preventing degradation and reducing the likelihood of power device failures, thereby enhancing the reliability of inverter systems and reducing accidents in vehicles and power facilities.

Problems solved by technology

This is disadvantageous in terms of keeping the semiconductor device durable enough.
Most of recent railway vehicle accidents are caused by such failure of the power device due to degradation of the sealing layer under elevated operating temperature.
Repair of the power device needs a great deal of labor and cost.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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Effect test

Embodiment Construction

(Structure of Semiconductor Device)

[0021]Next, a semiconductor device of this embodiment will be explained referring to the attached drawings.

[0022]As illustrated in FIG. 1, a semiconductor device 10 is configured to contain a case 12, a base 14, a semiconductor element 16, interconnect members 18, a sealing layer 20, and a bonding layer 22.

[0023]In this embodiment, each bonding layer 22 is configured to contain not only a third bonding layer 22C that connects electrodes 1604 of the semiconductor element 16 and the interconnect members 18, but also a first bonding layer 22A and a second bonding layer 22B.

[0024]The case 12 is configured by a sidewall-like frame member 1202 having an open top and an open bottom, and has a housing space 24 for housing the semiconductor element 16 inside the frame member 1202.

[0025]For the case 12, a variety of known materials including non-electroconductive ceramic materials are adoptable.

[0026]The base 14 is a member that supports the semiconductor el...

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PUM

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Abstract

Disclosed is a semiconductor device that is configured to contain a sealing layer for sealing a semiconductor element supported on a base, the sealing layer being configured to have a nanocomposite structure that comprises a large number of nanometer-sized (1 μm or smaller) insulating nanoparticles composed of SiO2, and an amorphous silica matrix that fills up the space around the insulating nanoparticles without voids and gaps.

Description

INCORPORATION BY REFERENCE[0001]This application is based on Japanese Patent Application No. 2016-27263, filed on Feb. 16, 2016, the content of which is incorporated hereinto by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This invention relates to a semiconductor device.[0004]2. Description of the Related Art[0005]Development of SiC semiconductor element using SiC (silicon carbide) has been promoted in recent years.[0006]The SiC semiconductor element has attracted public attention as a power device that controls large electric power, by virtue of its higher breakdown field than that of Si semiconductor element, and its wider band gap. The SiC semiconductor element can operate at temperatures as high as 150° C. or above at which Si semiconductor element cannot endure, and is reportedly operable even at 500° C. or above on the theoretical basis (see JP-A-2011-80796).[0007]By the way, the semiconductor elements are used in the form of semiconductor device ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L23/10H01L23/367H01L23/535H01L23/04
CPCH01L23/10H01L23/535H01L23/3675H01L23/04H01L21/56H01L23/3107H01L23/3121H01L23/3135H01L23/24H01L23/291H01L23/36H01L23/3735H01L2224/73253H01B3/12H01L23/29H01L23/3672H01L23/48H01L23/28H01L23/295H01L23/298H01L23/3114H01L23/3142
Inventor SEKINE, SHIGENOBU
Owner NAPRA