Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer based corrosion & time dependent chemical effects

Active Publication Date: 2018-10-11
APPLIED MATERIALS INC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a system and method for detecting residual chemical reactions on processed substrates. The method involves placing the substrate in a testing chamber and executing a diagnostic procedure where electrical outputs from a sensor on the substrate are recorded. These electrical outputs are then used to determine a subsequent processing operation. The sensors can be formed on a production substrate or a device substrate, depending on the desired application. The residual chemical reaction sensor includes a first probe pad and a second probe pad with interdigitated arms, and can be used to monitor changes in capacitance, noise floor, charge measurement, leakage current, breakdown voltage, and resistance. Overall, the patent text describes a way to improve the quality of processed substrates by detecting and measuring residual chemical reactions.

Problems solved by technology

These residual chemical reactions may adversely affect the performance of a semiconductor device.
For example, residual chemical reactions may result in corrosion, changes in the properties of the film, or defects.
However, the residual chemical reaction that is occurring post processing may not always be well understood.
However, there are no devices currently available that can measure the effects of the residual chemical reactions in real time.
Unfortunately, these measurements require handling the semiconductor device and can only provide discrete measurements over the duration the devices are monitored.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer based corrosion & time dependent chemical effects
  • Wafer based corrosion & time dependent chemical effects
  • Wafer based corrosion & time dependent chemical effects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018]Systems and methods for using a structures fabricated onto substrates to provide monitoring of corrosion and other time dependent chemical reactions are described in accordance with various embodiments. In the following description, numerous specific details are set forth in order to provide a thorough understanding of embodiments. It will be apparent to one skilled in the art that embodiments may be practiced without these specific details. In other instances, well-known aspects are not described in detail in order to not unnecessarily obscure embodiments. Furthermore, it is to be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0019]As noted above, residual chemical reaction may adversely affect the processing of some devices fabricated with semiconductor processing techniques. These residual chemical reactions may result in decreased yields since the entire process is not full...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

Description

BACKGROUND1) Field[0001]Embodiments relate to the field of semiconductor manufacturing and, in particular, to systems and methods for providing real time monitoring of residual reactions on a substrate after a processing operation has been implemented.2) Description of Related Art[0002]Subsequent to some processing operations in semiconductor manufacturing, there may be residual chemical reactions that persist on the substrate. These residual chemical reactions may adversely affect the performance of a semiconductor device. For example, residual chemical reactions may result in corrosion, changes in the properties of the film, or defects. Conversely, some deposited films may require chemical conversion post deposition to a final state prior to subsequent processing operations. However, the residual chemical reaction that is occurring post processing may not always be well understood. For example, the residual chemical reactions may proceed at an unknown rate and / or be dependent on t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/66
CPCH01L22/20H01L22/34H01L22/14H01L22/30H01L22/26H01L22/12H01L22/10H01L21/67253H01L23/5222H01L21/67028H01L23/5223H01L23/642H01L23/647H01L23/5228
Inventor TEDESCHI, LEONARDSCHWARZ, BENJAMINLEE, CHANGHUNHSIEH, PING HANDIAZ, ADAUTOMCCORMICK, DANIEL T.
Owner APPLIED MATERIALS INC