Polarized Light Emission From Micro-Pixel Displays and Methods of Fabrication Thereof

Abstract

A method and apparatus for achieving selective polarization states of emitted visible or other light in a stacked multicolor emissive display device by utilizing nonpolar, semipolar or strained c-plane crystallographic planes of semiconductor materials for light emitting structures within an electronic emissive display device.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a divisional of U.S. patent application Ser. No. 15 / 672,060 filed Aug. 8, 2017, which claims the benefit of U.S. Provisional Patent Application No. 62 / 429,033 filed Dec. 1, 2016, the disclosures of which are incorporated herein by reference.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The invention relates to solid state light emitters such as LEDs and laser diode structures. More specifically, the invention relates to solid state light emitting structures fabricated from III-nitride materials that take advantage of III-nitride material's unique crystallographic properties whereby polarized light is emitted from the light emitting structures.2. Prior Art[0003]Solid state light emitters are at the forefront of today's commercially-available electronic display systems. Many display systems utilize the properties of light polarization in order to obtain increased contrast ratios between “on” and “off” pixels ...

AI Technical Summary

Benefits of technology

This approach results in a more efficient, compact, and cost-effective light source for displays with tailored polarization states, reducing power consumption and eliminating the need for extraneous hardware, suitable for wearable and near-eye display applications.

Problems solved by technology

The use of unpolarized light requires that such display systems incorporate multiple polarizers and polarizing optics, making them larger, more complex, less energy efficient, and costly.

Another undesirable consequence of c-plane growth is the efficiency droop that occurs at higher current densities (Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Applied Physics Letters, 91, 141101 (2007)).

Nonetheless, this remains an additional element to be placed onto the semiconductor chip in order for polarized light emission to occur and the above prior art mentions nothing about how to actually incorporate the polarization technology into a display product.

No prior art has been identified that describes a systematic method for achieving selective polarization states by utilizing various crystallographic planes of semiconductor materials for micro-LED display purposes.

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