Semiconductor memory devices and methods of operating semiconductor memory devices
a memory device and semiconductor technology, applied in the field of memory, can solve the problems of reducing the yield of the dram, the increase in the bit error of the memory cells in the dram, and the rapid increase of the dram bit error, so as to reduce the scrubbing period
Active Publication Date: 2021-07-08
SAMSUNG ELECTRONICS CO LTD
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Benefits of technology
The patent text describes a semiconductor memory device with improved error detection and correction capabilities. The device includes an ECC circuit, a scrubbing control circuit, an error information register, and a control logic circuit. The ECC circuit detects errors in a memory cell row and quickly fixes them by writing back some codewords while performing a refresh operation on another memory cell row. This reduces the time needed for error correction and improves the reliability and performance of the semiconductor memory device.
Problems solved by technology
Due to the continuing size constraints in fabrication design rule of DRAMs, bit errors of memory cells in the DRAMs may rapidly increase and yield of the DRAMs may decrease.
Method used
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[0039]Example embodiments will be described more fully hereinafter with reference to the accompanying drawings.
[0040]FIG. 1 is a block diagram illustrating a memory system according to example embodiments.
[0041]Referring to FIG. 1, a memory system 20 may include a memory controller 100 and a semiconductor memory device 200.
[0042]The memory controller 100 may control overall operation of the memory system 20. The memory controller 100 may control overall data exchange between an external host and the semiconductor memory device 200. For example, the memory controller 100 may write data in the semiconductor memory device 200 or read data from the semiconductor memory device 200 in response to request from the host.
[0043]In addition, the memory controller 100 may issue operation commands to the semiconductor memory device 200 for controlling the semiconductor memory device 200.
[0044]In some example embodiments, the semiconductor memory device 200 is a memory device including dynamic me...
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A semiconductor memory device includes an ECC circuit; an error information register; a scrubbing control circuit to count refresh row addresses and output a scrubbing address for a scrubbing operation to be performed on at least one sub-page in a first memory cell row each time N refresh row addresses are counted; and a control logic circuit configured to: control the ECC circuit to sequentially read data corresponding to a first codeword, perform error detection on the first codeword, and provide error information based on the error detection, the error information indicating an error occurrence count in the first codeword; and record the error information in the error information register and selectively determine, based on the error information, whether to write back a corrected first codeword in a memory location in which the data corresponding to the first codeword is stored.
Description
CROSS-REFERENCE TO THE RELATED APPLICATIONS[0001]This application claims priority from Korean Patent Application No. 10-2020-0002000, filed on Jan. 7, 2020 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.BACKGROUND1. Field[0002]Apparatuses and methods consistent with example embodiments relate to memories, and more particularly to semiconductor memory devices, and methods of operating semiconductor memory devices.2. Related Art[0003]Semiconductor memory devices may be classified into non-volatile memory devices, such as flash memory devices, and volatile memory devices such as DRAMs. High speed operation and cost efficiency of DRAMs make it possible for DRAMs to be used for system memories. Due to the continuing size constraints in fabrication design rule of DRAMs, bit errors of memory cells in the DRAMs may rapidly increase and yield of the DRAMs may decrease. Therefore, there is a need for increased semiconduc...
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IPC IPC(8): G06F11/10G06F11/07G11C11/406
CPCG06F11/1068G06F11/106G11C11/40607G06F11/1016G06F11/0772G06F11/1044G11C7/18G11C8/08G11C16/0483G11C11/406G11C11/4087G11C11/4091G11C2211/4062G06F11/1076G11C11/40618
Inventor CHA, SANGUHNHWANG, JUSEONG
Owner SAMSUNG ELECTRONICS CO LTD