Pillar cell flash memory technology
Patent Information
- Authority / Receiving Office
- US ยท United States
- Patent Type
- Patents(United States)
- Current Assignee / Owner
- SANDISK TECH LLC
- Publication Date
- 2006-05-23
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
BACKGROUND OF THE INVENTION
[0001] The present invention relates to nonvolatile erasable programmable memories and more specifically, structures and fabrication techniques for a pillar structure memory cell storage element.
[0002] Memory and storage is one of the key technology areas that is enabling the growth in the information age. With the rapid growth in the Internet, World Wide Web (WWW), wireless phones, personal digital assistants (PDAs), digital cameras, digital camcorders, digital music players, computers, networks, and more, there is continually a need for better memory and storage technology.
[0003] A particular type of memory is nonvolatile memory. A nonvolatile memory retains its memory or stored state even when power is removed. Some types of nonvolatile erasable programmable memories include as Flash, EEPROM, EPROM, MRAM, FRAM, ferroelectric, and magnetic memories. Some nonvolatile storage products include CompactFlash (CF) cards, MultiMedia cards (MMC), secure digital (SD...