Method for fabricating electrical interconnect structure
a technology of electrical interconnection and hollow structure, which is applied in the direction of printed circuits, electrical apparatus, printed circuit aspects, etc., can solve the problems of reducing the electrical performance and heat dissipation efficiency of these electrical interconnect structures, the voids that cannot be formed, and the electroplating time of the electroplating layer, so as to reduce the possibility of voids and improve the yield of conductive posts. , the effect of reducing the time for electroplating
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
first embodiment
[0030]FIGS. 3A-3F are cross-sectional views showing progression of a method for fabricating an electrical interconnect structure according to a first embodiment of the present invention. Referring to FIG. 3A, the method for fabricating an electrical interconnect structure of the present invention is adapted for a circuit board manufacturing process. The method comprises providing a conductive substrate 310. The conductive substrate 310 is divided into a first conductive layer 312 and a bump conductive layer 314. The bump conductive layer 314 is disposed over the first conductive layer 312. In addition, the material of the conductive substrate 310 can be, for example, copper.
[0031]Referring to FIG. 3B, the bump conductive layer 314 is patterned, wherein the method of patterning the bump conductive layer 314 can be, for example, a photolithographic process and an etching process to form at least one bump 314a over the first conductive layer 312.
[0032]Referring to FIG. 3C, a dielectric...
second embodiment
[0038]The difference between the first and the second embodiments is that in the first embodiment, the bottom portion of the conductive post, i.e. the bump, is formed by a subtractive process, but it is formed by an additive process in the second embodiment.
[0039]FIGS. 4A-4E are cross-sectional views showing progression of a method for fabricating an electrical interconnect structure according to a second embodiment of the present invention. Referring to FIGS. 4A and 4B, a conductive layer 412 is provided, which can be made of copper. A patterned photoresist layer (not shown) is formed over the conductive layer 412. The conductive layer 412 serves as an electroplating seed layer, and a conductive material is formed in an opening (not shown) of the patterned photoresist layer by, for example, an electroplating method. As a result, at least one bump 414a is formed over the conductive layer 412.
[0040]Referring to FIG. 4C, a dielectric layer 420 is formed over the conductive layer 412 a...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com



