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Method for fabricating electrical interconnect structure

a technology of electrical interconnection and hollow structure, which is applied in the direction of printed circuits, electrical apparatus, printed circuit aspects, etc., can solve the problems of reducing the electrical performance and heat dissipation efficiency of these electrical interconnect structures, the voids that cannot be formed, and the electroplating time of the electroplating layer, so as to reduce the possibility of voids and improve the yield of conductive posts. , the effect of reducing the time for electroplating

Active Publication Date: 2008-07-01
UNIMICRON TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method for fabricating an electrical interconnect structure for a circuit board manufacturing process that improves the yield of conductive posts. The method involves patterning a conductive layer to form bumps, adding a dielectric layer over the bumps, and forming blind holes in the dielectric layer to expose the bumps. The blind holes are then filled with conductive material to create conductive posts. This method reduces the time for electroplating and decreases the possibility of voids within the conductive posts, resulting in a higher yield of conductive posts.

Problems solved by technology

However, the electroplating layer described above only forms hollow conductive structures, i.e. conductive vias or micro conductive vias, in sidewalls of openings inside the dielectric layer or the stacked layer.
These hollow structures cannot provide desired electrical performance and heat dissipation efficiency required for current circuit boards.
As a result, electrical performance and heat dissipation efficiency of these electrical interconnect structures 100b and 200b will decline.

Method used

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  • Method for fabricating electrical interconnect structure
  • Method for fabricating electrical interconnect structure
  • Method for fabricating electrical interconnect structure

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first embodiment

[0030]FIGS. 3A-3F are cross-sectional views showing progression of a method for fabricating an electrical interconnect structure according to a first embodiment of the present invention. Referring to FIG. 3A, the method for fabricating an electrical interconnect structure of the present invention is adapted for a circuit board manufacturing process. The method comprises providing a conductive substrate 310. The conductive substrate 310 is divided into a first conductive layer 312 and a bump conductive layer 314. The bump conductive layer 314 is disposed over the first conductive layer 312. In addition, the material of the conductive substrate 310 can be, for example, copper.

[0031]Referring to FIG. 3B, the bump conductive layer 314 is patterned, wherein the method of patterning the bump conductive layer 314 can be, for example, a photolithographic process and an etching process to form at least one bump 314a over the first conductive layer 312.

[0032]Referring to FIG. 3C, a dielectric...

second embodiment

[0038]The difference between the first and the second embodiments is that in the first embodiment, the bottom portion of the conductive post, i.e. the bump, is formed by a subtractive process, but it is formed by an additive process in the second embodiment.

[0039]FIGS. 4A-4E are cross-sectional views showing progression of a method for fabricating an electrical interconnect structure according to a second embodiment of the present invention. Referring to FIGS. 4A and 4B, a conductive layer 412 is provided, which can be made of copper. A patterned photoresist layer (not shown) is formed over the conductive layer 412. The conductive layer 412 serves as an electroplating seed layer, and a conductive material is formed in an opening (not shown) of the patterned photoresist layer by, for example, an electroplating method. As a result, at least one bump 414a is formed over the conductive layer 412.

[0040]Referring to FIG. 4C, a dielectric layer 420 is formed over the conductive layer 412 a...

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Abstract

A method for fabricating an electrical interconnect structure is adapted for a circuit board manufacturing process. The circuit board comprises a conductive substrate, which comprises a first conductive layer and a bump conductive layer. The bump conductive layer is patterned to form at least one bump over the first conductive layer. Then, a dielectric layer is formed over the first conductive layer and the bump. A second conductive layer is formed over the dielectric layer. At least one blind hole is formed in the second conductive layer and the dielectric layer, passing through the second conductive layer and the dielectric layer to expose the top surface of the bump. A conductive material is filled in the blind hole, and the conductive material in the blind hole and the bump constitute a conductive post.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of Taiwan application serial no. 93129344, filed Sep. 29, 2004.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a method for fabricating an electrical interconnect structure, and more particularly to a method for fabricating an electrical interconnect structure adapted for a circuit board manufacturing process.[0004]2. Description of the Related Art[0005]A circuit board is composed of a plurality of patterned circuit layers and a plurality of dielectric layers which are alternatively stacked on each other. In addition, methods of forming a circuit board include a laminating process and a build-up process. Either of these methods uses conductive vias to electrically connect these patterned circuit layers. Based on manufacturing process and structure, conductive vias can be divided into conductive through vias and conductive micro vias. According to ...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/31
CPCH05K3/4038H05K3/4647H05K3/423H05K3/4644H05K2203/1476H05K2201/0355H05K2203/0369H05K2203/0733H05K3/4652
Inventor LEE, SHAO-CHIENTSENG, TZYY JANGLEE, CHANG-MING
Owner UNIMICRON TECH CORP
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