Semiconductor device, display device and electronic device
a technology of semiconductor devices and display devices, applied in the direction of forming/stuttering elements, instruments, building parts, etc., can solve the problems of power consumption increases, and driving transistors to malfunction, so as to achieve stable display operation, suppress power consumption, and stable display operation
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embodiment modes
[0076]Embodiment Mode and Embodiments of the present invention will be described with reference to the drawings. The present invention can be carried out in many different modes. It is easily understood by those skilled in the art that modes and details disclosed herein can be modified in various ways without departing from the spirit and the scope of the present invention. It should be noted that the present invention should not be interpreted as being limited to the description of the embodiment mode and embodiments given below. Note that like portions or portions having a like function are denoted by the same reference numerals through drawings, and therefore, description thereon is omitted.
[0077]First, a pixel configuration and an operation principle of a semiconductor device of the present invention will be described.
[0078]FIG. 1 shows a pixel configuration of the present invention. Although only one pixel is shown here, the pixel portion of the semiconductor device actually in...
embodiment 1
[0099]Embodiment 1 will describe a specific pixel configuration and an operation principle of a semiconductor device of the present invention.
[0100]First, with reference to FIG. 3, a pixel configuration of a semiconductor device of the present invention is described. Although only one pixel is shown here, the pixel portion of the semiconductor device actually includes multiple pixels that are arranged in matrix of rows and columns.
[0101]The pixel includes a data transistor 501, a switch transistor 502, a NOR circuit including transistors 503 to 506, a transistor 507, a transistor 508, a transistor 509, a transistor 510, a transistor 511, a driving transistor 512, a data line 520, a first power source line 518, a second power source line 519, a first scan line 515, a second scan line 516, a third scan line 517, a light-emitting element 513, and a counter electrode 514. In this embodiment, the NOR circuit, the transistor 507, the transistor 508 and the transistor 509 are collectively ...
embodiment 2
[0118]Embodiment 2 will describe a gray scale expression method where gray scales are expressed by a time gray scale method in the semiconductor device of the present invention described in Embodiment 1.
[0119]A semiconductor device of the present invention is operated by an SES (Simultaneous Erasing Scan) drive. In order to achieve multi-gray scale display by the time gray scale method, an erasing TFT has been required to be used conventionally. In the present invention, such an erasing transistor is not required to be provided additionally since a reset period is provided before each selection period.
[0120]FIG. 4 shows an example in which gray scales are expressed by a time gray scale method. FIG. 4 is a timing chart for 3-bit gray scales, where reset periods Tr1 to Tr3, selection address (writing) periods Ta1 to Ta3, and sustain (emission) periods Ts1 to Ts3 are provided for the respective bits, and an erasing period Tel.
[0121]In the erasing period of this embodiment, operation in...
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