Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device, display device and electronic device

a technology of semiconductor devices and display devices, applied in the direction of forming/stuttering elements, instruments, building parts, etc., can solve the problems of power consumption increases, and driving transistors to malfunction, so as to achieve stable display operation, suppress power consumption, and stable display operation

Inactive Publication Date: 2010-02-16
SEMICON ENERGY LAB CO LTD
View PDF26 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor device that includes a first transistor, a second transistor, a memory circuit, a switching circuit, and a third transistor. The first transistor is connected to a data line and a power source line, the second transistor is connected to a scan line and the first power source line, and the memory circuit is connected to the second transistor and a scan line. The switching circuit conducts switching between the third transistor, the memory circuit, and the second power source line, and applies an input potential to the third transistor. The semiconductor device can be used in a display device, which includes a display portion and a driver circuit. The technical effects of the invention include improved data transmission speed, reduced power consumption, and improved display quality.

Problems solved by technology

However, there is such a problem that a potential that has been accumulated in the storage capacitor to be applied to the gate terminal of the driving transistor may fluctuate due to noise, leakage from the selection transistor or the like, and thus the driving transistor may malfunction without being capable of keeping the normal on or off state.
In addition, there is another problem in that the power consumption is increased if the voltage amplitude of the data line is increased in order to prevent malfunctions of the driving transistor that would be caused by fluctuation of a gate potential of the driving transistor.
Thus, a semiconductor device having a conventional pixel configuration has a problem in that a potential applied to the gate terminal of the driving transistor fluctuates due to noise or a leakage from the selection transistor, which causes the driving transistor to malfunction.
Further, even if a signal having a large potential amplitude is supplied from a data line, which is enough to ensure the stable operation of the driving transistor, there arises another problem in that the power consumption of a data line driver circuit is increased.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device, display device and electronic device
  • Semiconductor device, display device and electronic device
  • Semiconductor device, display device and electronic device

Examples

Experimental program
Comparison scheme
Effect test

embodiment modes

[0076]Embodiment Mode and Embodiments of the present invention will be described with reference to the drawings. The present invention can be carried out in many different modes. It is easily understood by those skilled in the art that modes and details disclosed herein can be modified in various ways without departing from the spirit and the scope of the present invention. It should be noted that the present invention should not be interpreted as being limited to the description of the embodiment mode and embodiments given below. Note that like portions or portions having a like function are denoted by the same reference numerals through drawings, and therefore, description thereon is omitted.

[0077]First, a pixel configuration and an operation principle of a semiconductor device of the present invention will be described.

[0078]FIG. 1 shows a pixel configuration of the present invention. Although only one pixel is shown here, the pixel portion of the semiconductor device actually in...

embodiment 1

[0099]Embodiment 1 will describe a specific pixel configuration and an operation principle of a semiconductor device of the present invention.

[0100]First, with reference to FIG. 3, a pixel configuration of a semiconductor device of the present invention is described. Although only one pixel is shown here, the pixel portion of the semiconductor device actually includes multiple pixels that are arranged in matrix of rows and columns.

[0101]The pixel includes a data transistor 501, a switch transistor 502, a NOR circuit including transistors 503 to 506, a transistor 507, a transistor 508, a transistor 509, a transistor 510, a transistor 511, a driving transistor 512, a data line 520, a first power source line 518, a second power source line 519, a first scan line 515, a second scan line 516, a third scan line 517, a light-emitting element 513, and a counter electrode 514. In this embodiment, the NOR circuit, the transistor 507, the transistor 508 and the transistor 509 are collectively ...

embodiment 2

[0118]Embodiment 2 will describe a gray scale expression method where gray scales are expressed by a time gray scale method in the semiconductor device of the present invention described in Embodiment 1.

[0119]A semiconductor device of the present invention is operated by an SES (Simultaneous Erasing Scan) drive. In order to achieve multi-gray scale display by the time gray scale method, an erasing TFT has been required to be used conventionally. In the present invention, such an erasing transistor is not required to be provided additionally since a reset period is provided before each selection period.

[0120]FIG. 4 shows an example in which gray scales are expressed by a time gray scale method. FIG. 4 is a timing chart for 3-bit gray scales, where reset periods Tr1 to Tr3, selection address (writing) periods Ta1 to Ta3, and sustain (emission) periods Ts1 to Ts3 are provided for the respective bits, and an erasing period Tel.

[0121]In the erasing period of this embodiment, operation in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A potential which is applied to a gate electrode of a driving transistor in accordance with an emission state or a non-emission state of a light-emitting element fluctuates due to noise or leakage from a selection transistor, or the like, which causes a problem in that the driving transistor cannot turn on or off normally and malfunctions. The present invention includes a transistor connected to a light-emitting element, a power source line, a scan line, a memory circuit, and a switching circuit, in which the transistor controls light emission or non light emission of the light-emitting element, and the switching circuit controlled by the scan line conducts switching between the transistor, and the memory circuit and the power source line, and applies an input potential to the transistor.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to semiconductor devices. In particular, the present invention relates to semiconductor devices using transistors. Further, the present invention relates to display devices including the semiconductor devices, and electronic devices including the display devices.[0003]Note that the term “semiconductor device” here includes general devices which can function by utilizing a semiconductive property.[0004]2. Description of the Related Art[0005]In recent years, self-luminous display devices having pixels formed with a light-emitting element such as a light-emitting diode (LED) are drawing attention. As examples of such light-emitting elements used in such self-luminous display devices, organic light-emitting diodes (also referred to as OLED (Organic Light-Emitting Diode), organic EL elements, and electroluminescence elements (also referred to as EL elements, or the like), have been drawing atten...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): G09G5/00
CPCG09G3/3258G09G2300/0857G09G2310/0251G09G2320/043G09G2320/029G09G2320/041G09G2310/0262E04G9/06E04G17/04E04G2009/025
Inventor MIYAKE, HIROYUKI
Owner SEMICON ENERGY LAB CO LTD