Semiconductor device and method of manufacturing the same

Abstract

An embodiment of a semiconductor device includes a substrate including a cell region and a peripheral region; a cell gate pattern on the cell region; and a peripheral gate pattern on the peripheral region, wherein a first cell insulation layer, a second cell insulation layer, and a third cell insulation layer may be between the substrate and the cell gate pattern, a first peripheral insulation layer, a second peripheral insulation layer, and a third peripheral insulation layer may be between the substrate and the peripheral gate pattern, and the second cell insulation layer and the third cell insulation layer include the same material as the respective second peripheral insulation layer and third peripheral insulation layer.

Description

PRIORITY STATEMENT[0001]This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2007-0094278, filed on Sep. 17, 2007, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a semiconductor device manufactured through simplified processes, and a method of manufacturing the same.[0004]2. Description of the Related Art[0005]A non-volatile memory device is a semiconductor device retaining its data even when there is no power supply. The non-volatile memory device includes a plurality of cell transistors and a plurality of driving transistors for driving the cell transistors.[0006]The non-volatile memory device may be classified into a floating gate type device and a floating trap type device according to a structure of a memory cell. A memory cell of the floating trap type device may include a gate insulat...

AI Technical Summary

Benefits of technology

The patent text describes a semiconductor device with improved reliability through simpler manufacturing processes. The device includes a substrate with a cell region and a peripheral region, and various layers of insulation and conductive materials. The methods of manufacturing the device involve forming the insulation layers and conductive materials simultaneously on the substrate, and then patterning the layers to create the cell gate pattern and peripheral gate pattern. The technical effects of this invention include improved reliability, simplified manufacturing processes, and better performance of the semiconductor device.

Problems solved by technology

Accordingly, even if a gate insulation layer of a floating trap type device is damaged, only a portion of charges stored in a charge storage layer may be lost.

Therefore, manufacturing processes of a non-volatile memory device may be complex.

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