Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex

Abstract

An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Description

[0001]This application is U.S. National Phase of International Application PCT / JP2007 / 064713, filed Jul. 26, 2007 designating the U.S., which claims priority to Japanese Patent Application No. 2006-205402 filed Jul. 27, 2006, Japanese Patent Application No. 2006-233225, filed Aug. 30, 2006, Japanese Patent Application No. 2006-233226, filed Aug. 30, 2006, Japanese Patent Application No. 2006-308812, filed Nov. 15, 2006, Japanese Patent Application No. 2006-338003, filed Dec. 15, 2006 and Japanese Patent Application No. 2007-008680, filed Jan. 18, 2007.TECHNICAL FIELD[0002]The present invention relates to an organoruthenium complex which can be used for forming a ruthenium thin film. The present invention also relates to a method for producing a ruthenium thin film, particularly a metallic ruthenium-containing thin film, by a chemical vapor deposition method (hereinafter, referred to as a CVD method) using the organoruthenium complex.BACKGROUND ART[0003]In recent years, several studi...

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Benefits of technology

[0013]An object of the present invention is to provide an organoruthenium complex which has a low melting point, excellent stability against moisture, air and heat, and is suitable for the film formation by a CVD method in order to solve the above-mentioned problems. Another object of the present invention is to provide a method for producing a ruthenium-containing thin film using the organoruthenium complex.

[0063]According to the present invention, there can be provided an organoruthenium complex which has a low melting point, excellent stability against moisture, air and heat, and is suitable for the film formation by a CVD method (an organoruthenium complex represented by the above general formula (1-1)). There can be also provided a method for producing a ruthenium-containing thin film using the organoruthenium complex. Furthermore, there can be provided a method for producing a metallic ruthenium-containing thin film which does not comprise a ruthenium oxide, using the organoruthenium complex, by a chemical vapor deposition method.

Problems solved by technology

In addition, owing to the high film-forming temperature, an impurity atom such as a carbon atom or the like may be mixed into the obtained ruthenium thin film, leading to the reduction of the specific resistance value.

According to this method, however, ruthenium oxide may be mixed in the obtained ruthenium thin film, leading to the reduction of the specific resistance value, although a hydrogen gas is used.

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