Plasma processing apparatus and plasma processing method
a technology of plasma processing apparatus and plasma, which is applied in the direction of manufacturing tools, chemical vapor deposition coatings, coatings, etc., can solve the problems of increasing equipment costs, difficult to uniformly supply plasma on the entire substrate, and difficult to uniformize the flow speed of reactant gas on the entire substra
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first embodiment
[0039]FIGS. 2A to 2D illustrate a structure of a local plasma generator in accordance with the present invention. FIG. 2A is an exterior perspective view; FIG. 2B is a horizontal cross sectional view; FIG. 2C is a vertical cross sectional view; and FIG. 2D is a vertical cross sectional view obtained when a length of deposition gas supply lines 31 is shortened compared to a length of a cover 28.
[0040]This local plasma generator is configured as a plasma generating device of an inductively coupled plasma (ICP) type, and has a structure in which a horseshoe-shaped coil 29 is disposed on a top surface of a rectangular box-shaped cover 28.
[0041]A reactant gas (hereinafter, referred to as an “etching gas”) is introduced into an inner space covered by the cover 28 from a plurality of reactant gas inlet lines 30 spaced apart from each other at regular intervals near a center of a ceiling portion of the cover 28. Thereafter, the introduced etching gas is converted into a plasma by a high fre...
second embodiment
[0052]FIGS. 3A to 3C illustrate a structure of a local plasma generator in accordance with the present invention. FIG. 3A is a horizontal cross sectional view; FIG. 3B is a vertical cross sectional view; and FIG. 3C is a vertical cross sectional view in which a length of the deposition gas supply lines 31 is shortened compared to a length of the cover 28.
[0053]This local plasma generator is configured as a plasma generating device of a capacitively coupled plasma (CCP) type, and has a structure in which a pair of parallel plate electrodes 33a and 33b is disposed inside a rectangular box-shaped cover 28. The second embodiment is different from the first embodiment of FIG. 2 in that the parallel plate electrodes 33a and 33b are provided, but is the same as the first embodiment of FIG. 2 in that an etching gas is introduced from a plurality of reactant gas inlet lines 30 disposed near the center of the ceiling portion of the cover 28.
[0054]The etching gas introduced into the cover 28 i...
third embodiment
[0058]FIGS. 4A to 4C depict a structure of a local plasma generator 23 in accordance with the present invention. FIG. 4A is a horizontal cross sectional view; FIG. 4B is a vertical cross sectional view; and FIG. 4C is a vertical cross sectional view in which a length of the deposition gas flow channel 34 is shorter than a length of the cover 28.
[0059]The local plasma generator 23 of the third embodiment is also configured as a CCP type plasma generating device, and is the same as that of the second embodiment of FIG. 3 in that a pair of parallel plate electrodes 33a and 33b is disposed inside a rectangular box-shaped cover 28 and also in that a reactant gas (etching gas) is introduced from a plurality of reactant gas inlet lines 30 disposed at the center of the ceiling portion of the cover 28.
[0060]However, in the third embodiment, a slit-shaped deposition gas channel 34 is provided instead of the deposition gas supply lines 31. In other words, the third embodiment is characterized ...
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Abstract
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