Three-dimensional non-volatile memory device, memory system including the same and method of manufacturing the same

Abstract

A three-dimensional (3-D) non-volatile memory device includes a plurality of vertical channel layers protruding from a substrate, a plurality of interlayer insulating layers and a plurality of memory cells stacked alternately along the plurality of vertical channel layers, and an air gap formed in the plurality of interlayer insulating layers disposed between the plurality of memory cells, so that capacitance between word lines is reduced to thus improve a program speed.

Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] The present application claims priority to Korean patent application number 10-2011-0133739 filed on Dec. 13, 2011, in the Korean Intellectual Property Office, the entire disclosure of which is incorporated by reference herein.BACKGROUND

[0002] 1. Field of Invention

[0003] The present invention relates generally to a semiconductor device and a method of manufacturing the same and, more particularly, to a three-dimensional non-volatile memory device, a memory system including the same and a method of manufacturing the same.

[0004] 2. Related Art

[0005] A non-volatile memory device retains data even in the absence of a power supply. Two-dimensional memory devices in which memory cells are fabricated in a single layer over a silicon substrate are reaching physical limits, preventing higher levels of integration. Accordingly, three-dimensional non-volatile memory devices in which memory cells are stacked in a vertical direction over a silicon substrat...

Examples

Embodiment Construction

[0018]Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The figures are provided to allow those having ordinary skill in the art to understand the scope of the embodiments of the disclosure. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0019]FIGS. 2 to 14 are cross-sectional views illustrating a method of manufacturing a three-dimensional (3-D) non-volatile memory device according to an embodiment of the present invention.

[0020]Referring to FIG. 2, a first interlayer insulating layer 103 may be formed over a substrate 101. Subsequently, a pipe gate PG that has first sacrificial layers 107 embedded therein may be formed on the firs...

CROSS-REFERENCE TO RELATED APPLICATION

[0001] The present application claims priority to Korean patent application number 10-2011-0133739 filed on Dec. 13, 2011, in the Korean Intellectual Property Office, the entire disclosure of which is incorporated by reference herein.BACKGROUND

[0002] 1. Field of Invention

[0003] The present invention relates generally to a semiconductor device and a method of manufacturing the same and, more particularly, to a three-dimensional non-volatile memory device, a memory system including the same and a method of manufacturing the same.

[0004] 2. Related Art

[0005] A non-volatile memory device retains data even in the absence of a power supply. Two-dimensional memory devices in which memory cells are fabricated in a single layer over a silicon substrate are reaching physical limits, preventing higher levels of integration. Accordingly, three-dimensional non-volatile memory devices in which memory cells are stacked in a vertical direction over a silicon substrat...

Examples

Embodiment Construction

[0018]Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The figures are provided to allow those having ordinary skill in the art to understand the scope of the embodiments of the disclosure. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0019]FIGS. 2 to 14 are cross-sectional views illustrating a method of manufacturing a three-dimensional (3-D) non-volatile memory device according to an embodiment of the present invention.

[0020]Referring to FIG. 2, a first interlayer insulating layer 103 may be formed over a substrate 101. Subsequently, a pipe gate PG that has first sacrificial layers 107 embedded therein may be formed on the firs...

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