Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic light-emitting device

a light-emitting device and organic technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems affecting the efficiency and lifetime characteristics of organic light-emitting devices, and achieve the effects of improving image quality, preventing image sticking and black non-uniformity, and improving emission efficiency and lifetime characteristics

Active Publication Date: 2015-08-04
SAMSUNG DISPLAY CO LTD
View PDF24 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010]One aspect of the invention provides an organic light-emitting device in which the balance of carriers injected into an emission layer is efficiently achieved, and thus emission efficiency and lifetime characteristics are improved. In addition, image sticking and black non-uniformity are prevented, and thus the image quality is improved.

Problems solved by technology

Such a shift of the emission site affects the efficiency and lifetime characteristics of organic light-emitting devices.
However, the balance of the carriers achieved with this method is not satisfactory, and thus, there is still a demand for further improvement.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0102]A silver (Ag) layer and an ITO layer were sequentially formed on a glass substrate to a thickness of about 100 nm and about 7 nm, respectively. Next, the glass substrate was washed with distilled water, and then ultrasonically washed in isopropyl alcohol and then in pure water for 5 minutes each, followed by drying in a vacuum oven for 1 hour.

[0103]N,N′-diphenyl-N,N′-di(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB) was deposited on the ITO layer to form a first hole transport layer (HTL) having a thickness of about 34 nm, and 1,4,5,8,9,12-hexaazatriphenylenehexanitrile (HAT-CN6) as an intermediate layer material was deposited thereon to form an intermediate layer having a thickness of about 5 nm.

[0104]NPB was deposited on the intermediate layer to form a second HTL having a thickness of about 68 nm, and HAT-CN6 was then deposited thereon to form another intermediate layer having a thickness of about 5 nm. NPB was then deposited on the intermediate layer to form a third HTL havi...

example 2

[0109]An organic light-emitting device was manufactured in the same manner as in Example 1, except that a green EML, instead of the red EML, was formed.

[0110]The green EML was formed using 88 parts by weight of 4,4′-bis(carbazol-9-yl) biphenyl (CBP) as a host, 10 parts by weight of tris(2-phenylpyridinato)iridium as an emitting dopant, and 1 part by weight of N,N′-diphenyl-N,N′-di(1-naphthyl)-1,1′-biphenyl-4,4′-diamine) (NPB) as an auxiliary dopant to achieve a thickness of about 20 nm.

example 3

[0111]An Ag layer and an ITO layer were sequentially formed on a glass substrate to a thickness of about 100 nm and about 7 nm, respectively. Next, the glass substrate was washed with distilled water, and then ultrasonically washed in isopropyl alcohol and then in pure water for 5 minutes each, followed by drying in a vacuum oven for 1 hour.

[0112]NPB was deposited on the ITO layer to form a first HTL having a thickness of about 34 nm, and 1,4,5,8,9,12-hexaazatriphenylenehexanitrile (HAT-CN6) as an intermediate layer material was deposited thereon to form an intermediate layer having a thickness of about 5 nm.

[0113]NPB was deposited on the intermediate layer to form a second HTL having a thickness of about 68 nm, and HAT-CN6 was then deposited thereon to form another intermediate layer having a thickness of about 5 nm. NPB was then deposited on the intermediate layer to form a third HTL having a thickness of about 34 nm.

[0114]Next, a blue EML was formed on the third HTL to have a thi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An organic light-emitting device including a first electrode, a plurality of hole transport layers, a plurality of intermediate layers, an emission layer, a plurality of electron transport layers, and a second electrode. The emission layer may include a host, an emitting dopant, and an auxiliary dopant. The host and the auxiliary dopant are able to transport different types of carriers.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of Korean Patent Application No. 10-2010-0045474, filed on May 14, 2010, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND[0002]1. Field[0003]The invention relates to an organic light-emitting device, and more particularly, to an organic light-emitting device having improved emission efficiency and driving voltage.[0004]2. Description of the Related Art[0005]Organic light-emitting devices are self-emitting devices displaying images by using light generated while electrons and holes injected through an anode and a cathode, respectively, recombine in an emission layer or at the interface between a carrier transport layer and the emission layer.[0006]In order to improve the emission efficiency of an organic light-emitting device, the balance of electrons and holes injected into the emission layer should be appropriately tuned....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): H01L51/54H01L51/52H01L51/50H01L51/00
CPCH01L51/5048H01L51/5016H01L51/5088H01L51/0072H01L51/0077H01L51/0085H01L51/0092
Inventor HAMADA, YUJI
Owner SAMSUNG DISPLAY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com