Method of manufacturing a MOSFET structure

a manufacturing method and mosfet technology, applied in the direction of pulse technique, electronic switching, semiconductor devices, etc., can solve the problem of difficult to do with existing techniques

Inactive Publication Date: 2014-01-28
INTERSIL INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enables accurate alignment of MOSFET regions, reducing ON resistance and maintaining high breakdown voltage, thus improving the operational efficiency of MOSFETs in integrated circuits.

Problems solved by technology

Unfortunately this is difficult to do with existing techniques because mask edges used to form the various regions introduce an uncertainty factor called an alignment tolerance that contributes to the space between the regions.

Method used

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  • Method of manufacturing a MOSFET structure
  • Method of manufacturing a MOSFET structure
  • Method of manufacturing a MOSFET structure

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Embodiment Construction

[0022]In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific preferred embodiments in which the inventions may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the spirit and scope of the present invention. The following detailed description is therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the claims and equivalents thereof.

[0023]Embodiments of the present invention relate to integrated circuits having relatively accurate aligned regions that are spaced a predetermined distance apart from each other. Moreover, some embodiments of the present invention relat...

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Abstract

A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of dielectric. Removing portions of the gate material layer to form a first and second gate material regions of predetermined lateral lengths. Introducing a first conductivity type dopant in the substrate to form a top gate using first edges of the first and second gate material regions as masks, Introducing a second conductivity dopant of high dopant density in the substrate to form a drain region adjacent the surface of the substrate using a second edge of the second gate material region as a mask to form a first edge of the drain region, wherein a spaced distance between the top gate and the drain region is determined by the lateral length of the second gate material region.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]Notice: More than one reissue application has been filed for the reissue of U.S. Pat. No. 7,687,336. These reissue applications include application Ser. No. 13 / 235,000, filed on Sep. 16, 2011, and application Ser. No. 13 / 590,856, filed on Aug. 21, 2012, which is a continuation of application Ser. No. 13 / 235,000.[0002]This is a Divisional Application of U.S. patent application Ser. No. 11 / 234,344, filed on Sep. 29, 2005, which is a divisional of application of U.S. Pat. No. 6,974,753, filed Sep. 24, 2004, which is a divisional application of U.S. Pat. No. 6,822,292, filed Nov. 21, 2001. This divisional application is also related to U.S. Pat. No. 7,161,223, filed Sep. 24, 2004. All of the above applications and patents are incorporated in there entirety by reference.BACKGROUND[0003]Integrated circuits incorporating high voltage lateral elements include both metal-oxide-semiconductor field-effect transistors (MOSFETs) devices and bipolar jun...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): H01L21/331H01L21/337H01L21/336H01L29/06H01L29/78
CPCH01L29/0619H01L29/0847H01L29/66659H01L29/735H01L29/7835H01L29/8611H03K17/941H01L29/0615H01L29/0634H01L29/0696H01L29/402H01L2924/0002H01L2924/00
InventorBEASOM, JAMES D.
OwnerINTERSIL INC