Method for online test of wafer metal interconnection line reliability

Abstract

This invention provides a transistor metal connection wire reliability on line test method, which comprises the following steps: using the transistor cutting channel test circuit and exerting test voltage on any point of the test circuit comb circuit; testing the leakage current between the connection wires of the comb circuit; step by step increasing the test voltage, if the leakage current tested is small and the voltage is basically stable, which means the metal transistor connection wire electric characteristic has good reliability, otherwise, there is some problems existing.

Description

technical field [0001] The invention relates to a method for detecting the electrical characteristics of a chip, in particular to an on-line test for the reliability of a chip metal interconnection line. Background technique [0002] With the shrinking of the size of integrated circuits and the increase of silicon wafer area, the integrated circuit industry has entered the technical category of 0.13mm line width, and the circuit complexity or integration of integrated circuits has increased, requiring multi-layer polycrystalline silicon layers; On the one hand, the line width of metal lines cannot be reduced according to the reduction ratio of MOS components. Therefore, the previous design of a single metal layer cannot complete the wiring work of the entire integrated circuit. Instead, two, three or more layers must be used. Layer metal interconnection lines to meet the requirements of circuit design. When the above multi-layer polysilicon and multi-layer metal interconnec...

AI Technical Summary

Problems solved by technology

[0005] However, the above-mentioned detection is only used to detect whether there is a short circuit between the connecting wires online, and cannot detect the reliability of the insulating dielectric material layer online.

Because the existing time-dependent insulating dielectric material layer breakdown voltage (TDDB) and other electrical acceptance tests can only be randomly sampled during the wafer production process, and such testing usually takes several days, the testing process is complicated, especially This kind of detection is carried out offline, which is for mass production. When it is confirmed that a certain wafer has a time-dependent insulating dielectric material layer breakdown voltage (TDDB) problem, the same batch of wafers may have been processed, which affects IC process yield

Images