Soft program and soft program verify of core ctlls in flash memory array

A soft program, soft programming technology, used in information storage, static memory, read-only memory, etc.

Inactive Publication Date: 2008-01-30
CYPRESS SEMICON CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] A system and method are provided to overcome or minimize the problems and shortcomings of existing memory cell soft programming verification schemes and systems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Soft program and soft program verify of core ctlls in flash memory array
  • Soft program and soft program verify of core ctlls in flash memory array
  • Soft program and soft program verify of core ctlls in flash memory array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The following is a detailed description of the present invention in conjunction with the accompanying drawings, wherein the reference numerals will be compared with the component symbols everywhere in the text. The method and system provided by the present invention are used for soft programming, and for verifying the correct soft programming of one or more double-bit memory cells, the present invention can also be used in a flash memory device, together with the soft program of the chip or segment, and Software program verification. For example, to apply soft programming pulses to memory cells in a flash memory device, a sector soft program verify operation is performed. Later, when verifying which memory cells in the component have been correctly soft-programmed, it can also be realized by the present invention.

[0036] In addition, the present invention selectively attempts to resoft-program memory cells that were over-erased during the erase portion of the operati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method (900) and system (400) are disclosed for memory cell soft program and soft program verify, to adjust, or correct the threshold voltage (350) between a target minimum (380) and maximum (390), which may be employed in assoication with a dual bit memory cell architecture (50). The method (900) includes applying one reference voltage signal (455) to the over erased core cell, and a diference cell (480), comparing the two currents (475) produced by each, selectively verifying (485, 435) proper soft programming of one or more bits of the cell, determining that the dual bit memory cell is properly soft programmed (950). The method may also comprise selectively re-verifying (950, 955) proper soft programming of the cells after selectively soft programming (965) at least one or more bits (980) of the cell.

Description

technical field [0001] The present invention relates to memory systems, and more particularly to a flash memory system and method, wherein a new reference cell structure, and the application of a unique reference voltage during soft program and soft program verify operations, the present invention can eliminate reference memory cell Correcting the problems caused by low threshold voltages can enhance the elimination of core cell threshold voltage distributions and can help faster programming times. Background technique [0002] European patent EP-A-0 953 985 discloses a non-volatile flash electrically erasable read-only memory (EEPROM) device comprising a built-in reference cell with a given, precise threshold voltage . This threshold is the upper-limit of the threshold voltage of erased memory cells. The EEPROM includes erasure verification, program verification and over-erase verification. The over-erase check needs to verify that the threshold voltage of the memory cel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G11C16/02G11C16/06
CPCG11C16/3436G11C16/0475G11C16/3409G11C16/3404G11C16/06
Inventor S·K·亚桥瑞尼D·G·哈密顿B·Q·李栗原和弘
Owner CYPRESS SEMICON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap