Semiconductor integrated circuit device

Abstract

The invention provided a semiconductor integrated circuit device that suppresses a production cost and allows a number of semiconductor memory chips to be mounted. This semiconductor device is provided with a first selective transistor, a second selective transistor, a first nonvolatile semiconductor memory including a number of first memory cell transistors connected in series between the first and second selective transistors and a second nonvolatile semiconductor memory including a third selective transistor and second memory cell transistor connected in series. In addition, the first and second gate insulating films 603 of the first and second memory cell transistors have the same thickness, the first and second floating gates 604 have the same thickness, the first and second inter-gate insulating films 605 have the same thickness and the first and second control gates have the same thickness of film.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit device. For example, it relates to a semiconductor integrated circuit device in which a nonvolatile semiconductor memory and a logic circuit are formed on the same semiconductor substrate. Background technique [0002] Conventionally, a NAND-type flash memory is known as a memory for data storage used in digital cameras and the like (for example, see Non-Patent Document 1). The NAND flash memory uses FN (Fowler-Nordheim) tunneling to write and erase data. [0003] In addition, there is known a NOR flash memory that also uses FN tunneling to write and erase data (see, for example, Non-Patent Document 2). This NOR type flash memory is different from a type of memory in which electrons are exchanged by hot electrons, and a memory cell has one memory cell transistor and two select transistors. Hereinafter, such a flash memory is referred to as a 3Tr-NAND type flash memory. [0004] And...

AI Technical Summary

Problems solved by technology

However, since the operating voltages of various flash memories are different from each other, once multiple types of flash memories are to be carried on the same LSI, there will be problems such as complicating the structure of the LSI and making the cost very high

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