Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Compensation method of a bias magnetic field in a storage surface of a magnetoresistive storage cell, and semiconductor device

A technology for memory cells and semiconductors, applied in the field of compensating this bias field, can solve problems such as reducing the stability of the reference layer

Inactive Publication Date: 2008-05-14
INFINEON TECH AG
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The biggest effect is that one of the reference sublayers must be used, so destabilizing that reference layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compensation method of a bias magnetic field in a storage surface of a magnetoresistive storage cell, and semiconductor device
  • Compensation method of a bias magnetic field in a storage surface of a magnetoresistive storage cell, and semiconductor device
  • Compensation method of a bias magnetic field in a storage surface of a magnetoresistive storage cell, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0060] Figures 2 and 3 have been described in the introduction.

[0061] FIG. 1 is a simple cross-sectional schematic diagram illustrating a semiconductor device 7 with a magnetoresistive memory cell 6. The cross-sectional schematic diagram is not to scale, and the illustration does not limit the features of the present invention.

[0062] The memory cell 6 is structured by storage, isolation and reference layers 1 , 2 , 3 , and in the illustrated example, the memory cell 6 is mounted on a single layer of the semiconductor device 7 . A passive layer 11 is used parallel to a memory cell layer formed from the memory cells 6 .

[0063] Between the reference of the memory cell 6 and the storage layers 1, 3, ferromagnetic coupling generates a magnetic bias field.

[0064] The components indicated by the dotted lines have the compensation layer 7 provided by the semiconductor device 7, which is omitted in the first embodiment. In the first embodiment, the compensation layer 9 is u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An arrangement is described for compensation of a magnetic bias field in a storage layer of at least one magnetoresistive memory cell provided in a semiconductor device. In this arrangement, at least one compensation layer that is provided with a magnetization compensates for the bias field in the storage layer. A method is also described for compensation of a magnetic bias field in a storage layer of a magnetoresistive memory cell provided in a semiconductor device. A step is provided for applying a ferromagnetic compensation layer. In another step, a bias field is measured in terms of magnitude and direction. In another step, the bias field is compensated by magnetization of the compensation layer.

Description

technical field [0001] The invention relates to a device for compensating a magnetic bias field in a storage layer of a magnetoresistive memory unit used in a semiconductor device. Furthermore, the invention relates to a method of compensating for this bias field. A memory cell based on the magnetoresistance effect is usually stacked with two thin ferromagnetic layers sandwiching a non-ferromagnetic isolation layer with a thickness of several atomic layers. Background technique [0002] One of the two ferromagnetic layers is composed of a hard magnetic material, typically a cobalt-iron alloy. The magnetization has a fixed strength and direction and functions as a reference layer. [0003] A second ferromagnetic layer made of a soft magnetic material, typically nickel-iron alloy, forms a storage layer. Its magnetization is in the same direction or opposite to the magnetization direction of the reference layer, corresponding to the information content of the memory cell. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/16G11C11/15H01L21/8246H01L27/105H01L43/08H01L43/12
CPCG11C11/16G11C11/161G11C11/1675G11C11/15
Inventor J·班格特
Owner INFINEON TECH AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com