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Method for manufacturing light emitting diodes

A technology of light-emitting diodes and electrodes, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing external quantum efficiency

Inactive Publication Date: 2008-07-30
LG ELECTRONICS INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In other words, if light emitted from the active layer 153 of a prior art nitride compound LED propagates toward the transparent electrode 155 at an angle greater than the critical angle, it is totally reflected and confined within the device, and is absorbed into the epitaxial layer of the device and the sapphire substrate 151, thereby reducing the external quantum efficiency (external quantum efficiency)

Method used

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  • Method for manufacturing light emitting diodes
  • Method for manufacturing light emitting diodes
  • Method for manufacturing light emitting diodes

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Embodiment Construction

[0028] refer to Figure 3a to Figure 3e , the pattern 210 is formed on the upper surface of the substrate 200 ( Figure 3a ). Here, the pattern 210 is defined by protrusions, depressions, or a combination of protrusions and depressions on the upper surface of the substrate 200 .

[0029] The substrate 200 on which the pattern 210 is formed has a first layer 220 having a first polarity, an active layer 230, a second layer 240 having a polarity opposite to that of the first layer 220, and a second layer 220 formed thereon. An electrode 250 ( Figure 3b ). Subsequently, the first electrode 250 is bonded to the upper surface of the support 260 ( Figure 3c ).

[0030] The supporter 260 functions to securely fix the light emitting structure including the first layer 220 , the active layer 230 and the second layer 240 when the substrate 200 is removed during the process (to be described later). Preferably, the supporter 260 is a chip mount substrate with an ohmic contact materi...

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Abstract

A method for manufacturing the LEDs is disclosed, whereby the light extraction efficiency of the device can be enhanced by forming patterns on a top surface of a substrate, a light emitting structure is formed on the top surface of the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on top surface of the substrate are formed on the surface of the light emitting structure.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Application Serial No. 10-2005-0051671 filed with the Korean Industrial Property Office on Jun. 16, 2005 and assigned Serial No. 10-2005-0051671, the contents of which are incorporated herein by reference. technical field [0003] The present description generally relates to methods of manufacturing light emitting diodes. Background technique [0004] In general, gallium nitride (GaN)-based group III compound semiconductor light-emitting diodes (hereinafter referred to as LEDs) have a wide bandgap and excellent reliability relative to diodes using other semiconductors, enabling the development of LEDs covering from ultraviolet to infrared LEDs with a wide range of light emission spectra of light. [0005] Recent advances in the technology of semiconductor LEDs made of III-nitride compounds allow the use of the diodes in various fields of commercial purposes. [0006] In particul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/32H01L33/42
CPCH01L33/22H01L33/0079H01L33/0093
Inventor 林时钟
Owner LG ELECTRONICS INC