Method for making carbon nano tube array
A carbon nanotube array and fabrication method technology, applied in the field of carbon nanotube array fabrication, can solve the problems of difficult local control of multiple growth directions, increase the complexity of nanodevice design, etc., and achieve rich diversity, simple equipment, and simple process. easy effect
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no. 1 example
[0038] The basic steps for making carbon nanotube arrays provided by this embodiment include:
[0039] providing a base, and forming a shielding layer on the base;
[0040] A catalyst sputtering source is provided, and a catalyst layer with a thickness gradient is sputtered on the substrate in cooperation with the shielding layer, and within the range of the thickness gradient, there is a place whose thickness is closest to an optimal thickness;
[0041] removing the shielding layer, and annealing the catalyst layer;
[0042] A carbon source gas is introduced to grow a carbon nanotube array on the above-mentioned treated catalyst layer, and the carbon nanotube array bends and grows in a direction deviating from the optimal thickness.
[0043] The specific instructions for the above steps are as follows:
[0044] see figure 1 , a substrate 10 is provided, and a shielding layer 40 with a certain thickness is formed on one side of the substrate 10 (shown as the right side in t...
no. 2 example
[0066] In this embodiment, a surface-type catalyst sputtering source or a linear catalyst sputtering source is used, and the linear catalyst sputtering source and the substrate are relatively moved in a large range to ensure that the substrate in the area around the shielding layer is deposited with Catalyst layer with thickness gradient. The basic steps of making carbon nanotube arrays are the same as those of the first embodiment, and each step is specifically described as follows:
[0067] see Figure 7 , a substrate 70 is provided, and a shielding layer 80 with a certain thickness is formed at the center of the substrate 70; a surface-type catalyst sputtering source 60 is arranged above the shielding layer 80, and when the substrate is sputtered with catalyst, a part of the catalyst is shielded Layer 80 is blocked, thereby forming a catalyst layer 90 with a thickness gradient on the substrate.
[0068] The shielding layer has a vertical shielding surface with a certain h...
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Abstract
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