Semiconductor device and method of manufacturing same

A semiconductor and device technology, applied in the field of silicon-on-insulator materials, can solve problems such as lateral pnp transistor misoperation, and achieve the effect of eliminating misoperation

Inactive Publication Date: 2008-11-26
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thus, when testing the SOI process transferred to the insulator, lateral pnp transistor malfunctions can be seen, which are caused by electrostatic discharge of the synthetic resin package of the device under test

Method used

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  • Semiconductor device and method of manufacturing same

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Embodiment Construction

[0025] As shown in the embodiment of FIG. 1, the present invention provides a semiconductor device in the form of an SOI device 100 comprising an insulating layer 10 of dielectric material and a silicon substrate 20 disposed on the insulating layer 10. As shown in FIG. Integrated in this silicon substrate 20 is an element in the form of a bipolar pnp transistor 30, which element has a lightly doped region (in the form of an n-doped region 34) in its central region, while in each of the two lateral regions Inside one is a highly doped region (in the form of P-doped regions 32 and 36 respectively). As shown in FIG. 1, the silicon substrate 20 containing the components 30 is fixed on the insulating layer 10 by means of a fixing medium in the form of an adhesive layer 12 .

[0026] Between the insulator 10 and the n-doped region 34 of the pnp transistor 30, a planar first metallization region (in the form of a first field plate 40) is formed to serve as the lead layer of the pnp t...

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Abstract

To refine a semiconductor device (100), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer (10) made of a dielectric material; at least one silicon substrate (20) arranged on said isolating layer (10); at least one component (30) integrated in the silicon substrate (20), which component has at least one slightly doped zone (34); as well as at least a first, in particular planar, metallization region (40) arranged between the isolating layer (10) and the component (30), in particular between the isolating layer (10) and the slightly doped zone (34) of the component (30), as well as a method of manufacturing at least one semiconductor device (100) in such a manner that trouble-free operation also of slightly doped components (30), such as pnp transistors, is guaranteed in a SOI process transferred onto the insulator, it is proposed that at least a second, in particular planar, metallization region (42) is arranged on the side of the silicon substrate (20) facing away from the isolating layer (10), in the area of the component (30), particularly in the area of the slightly doped zone (34) of the component (30).

Description

technical field [0001] The present invention relates generally to the field of semiconductor technology, and in particular to so-called silicon-on-insulator (SOI) materials. [0002] In particular, the invention relates to a semiconductor device in the form of a silicon-on-insulator device and a method of manufacturing the same. Background technique [0003] If a component with a lightly doped region is used (as in the case of a bipolar pnp transistor with an n-doped region), attention must be paid to the potential of this lightly doped region so that the potential difference does not exceed the threshold voltage and cause this lightly doped region The conductivity type changes (the so-called reversal process). Exceeding this threshold voltage will form a conducting channel (in this case, a P-type channel in the base of a bipolar pnp transistor), which makes the two highly doped regions (in this case, bipolar pnp The transistor's emitter and collector) are shorted to each ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84H01L27/12H01L21/762H01L29/735H01L29/41H01L21/02H01L21/331H01L21/822H01L27/04H01L29/06H01L29/73
CPCH01L29/7317H01L29/66265H01L21/76264
Inventor W·施尼特H·波尔曼
Owner NXP BV
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