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Semi-fusible link system for a multi-layer integrated circuit and method of making same

A connection system, integrated circuit technology, applied in the field of semi-fusible connection system, can solve the problem of wasting chip space and so on

Inactive Publication Date: 2009-01-28
ANALOG DEVICES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The result is that the fusible link elements, active circuitry, and selector circuitry must be arranged laterally on the same layer as the metal layer, wasting useful chip space

Method used

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  • Semi-fusible link system for a multi-layer integrated circuit and method of making same
  • Semi-fusible link system for a multi-layer integrated circuit and method of making same
  • Semi-fusible link system for a multi-layer integrated circuit and method of making same

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Embodiment Construction

[0029] In addition to the preferred embodiments or the embodiments disclosed below, the invention can have other embodiments or be practiced or carried out in different ways. That is, it is to be understood that the invention is not limited to the details of construction and arrangement of elements thereof given in the following specification or drawings.

[0030] As discussed in the Background section above, a prior art semi-fusible link system 10 generally includes a semi-fusible link element 12 and a select transistor 14 (eg, an NMOS transistor). A logic high signal at gate 16 activates transistor 14 when semi-fusible link 12 is selected to be blown. The current in the drain 18 blows the semi-fusible link 12 causing the resistance of the semi-fusible link element 12 to change. A change in the resistance of the semi-fusible connection element 12 may be used to cause a change in the parameter of the active circuit 20 coupled to the semi-fusible connection system 10 .

[003...

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Abstract

A semi-fusible link system and method for a multi-layer integrated circuit including active circuitry on a first layer having a metal one layer including a semi-fusible link element on a second layer having a metal two layer adapted for interconnecting with the metal one layer, and a selector circuit disposed on the first layer.

Description

[0001] related application [0002] This application claims the benefit of U.S. Provisional Application No. 60 / 484,369, filed July 2, 2003, entitled "Thin Film Semi-Fusible Links in Sub-Micron Processes," and U.S. Patent Application filed February 12, 2004 No. 10 / 777,337 entitled "Semi-Fusible Link System for a Multi-Layer Integrated Circuit and Method of Making Same." technical field [0003] The present invention relates generally to semi-fusible joining systems and methods, and more particularly to such improved semi-fusible joining systems and methods for multilayer integrated circuits. Background technique [0004] Fusible links are commonly used in integrated circuits (ICs) to adjust one or more IC parameters. A typical fusible link has an intact state and a blown state. In the intact state, the fusible link provides very low resistance, while in the fused state, the fusible link provides an open circuit. An example application of a fusible link is to adjust the off...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/58H01L23/62
Inventor 丹尼斯·J.·多伊尔
Owner ANALOG DEVICES INC