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Method for improving ultrathin plasma silicon oxy nitride electrical test accurancy

A plasma and electrical testing technology, applied in the direction of semiconductor/solid-state device testing/measurement, etc., can solve the problems of measurement time influence, EOT data inconsistency, curve non-linear, etc., to shorten the time and improve the efficiency.

Inactive Publication Date: 2009-02-11
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

exist figure 1 Among them, the breakdown voltage value should be higher at lower DPN power, but the actual curve is not linear because of the influence of measurement time, and the EOT data will also be more inconsistent, which is very affected by the measurement time

Method used

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  • Method for improving ultrathin plasma silicon oxy nitride electrical test accurancy
  • Method for improving ultrathin plasma silicon oxy nitride electrical test accurancy
  • Method for improving ultrathin plasma silicon oxy nitride electrical test accurancy

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Embodiment Construction

[0021] In order to better understand the content of the present invention, the present invention will be further described below in conjunction with examples, but these examples do not limit the present invention.

[0022] During the interval between obtaining the plasma nitrided oxide sample and waiting for the measurement, that is, before it is formally measured, the reverse charge is deposited on the surface of the sample comprehensively, and the deposited charge penetrates into the oxide surface for a period of time. and other charge neutralization in the object film. The sample can then be tested for corona charge using, for example, the Q-V method, without the test results being affected by excess unstable charges within the sample.

[0023] Wherein, the opposite charge can be deposited in such a way that an inert gas such as argon is ionized so that it has an electric charge opposite to that of the charge in the oxide film of the test sample, and the surface of the test...

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Abstract

In technique of semiconductor device manufacture, measurement of equivalent oxide thickness (EOT), and voltage of soft breakdown is a very important key for oxide of gate in 90 Nano manufacturing procedure. When conventional quasi C-V method is applied to azotized oxide, there are lots of noises caused by unstable charges in oxide. Especially, it is takes long time for positive charges brought from nitridation of plasma to be discharged and stabilized. Otherwise, unstable state of charges makes measured result contain lots of noises. Usually, it needs to take round the day to make charges stable before formal measurement. The disclosed method makes charges in testing sample stable rapidly, and prevents issue of noise.

Description

technical field [0001] The invention relates to a method for improving the electrical test accuracy of ultra-thin plasma silicon oxynitride, in particular to a test method which can avoid the noise generated by the measured data due to the charge left by the plasma nitridation process in the oxide . Background technique [0002] In the semiconductor manufacturing process, for the gate oxide of the 90nm process, the measurement of the equivalent oxide thickness EOT (Equivalent Oxide Thickness) and the soft breakdown voltage is very critical. Conventional oxides or thick oxides can be easily measured by quasi-C-V methods, such as corona charges deposited on the surface of silicon wafers for measurement. But this Q-V measurement of corona charge is noisy when applied to plasma nitrided oxides, because the charge in the oxide is unstable, diffuses out and is lost over time. In particular, the positive charges integrated by plasma nitridation will take a long time to discharge ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
Inventor 郭佳衢
Owner SEMICON MFG INT (SHANGHAI) CORP
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