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193nm far-ultraviolet photoetching rubber and its preparation method

A technology of far-ultraviolet lithography and sensitizer, applied in the field of photoresist, can solve the problems of poor dry corrosion resistance, complex polymerization process, high polymer rigidity, etc., and achieve good heat resistance, simple preparation process, and product yield. high rate effect

Active Publication Date: 2009-03-11
SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The synthesis process of type ① structure is relatively simple, with high optical transparency and high resolution at 193nm wavelength, but poor dry corrosion resistance; the polymerization process of type ② structure is relatively simple, high dry corrosion resistance, but because the main chain is ring shape unit, the polymer has high rigidity, and the formed film is relatively brittle and easy to be hydrolyzed; the polymerization process of the ③ and ④ structure is relatively complicated, and its application range is limited

Method used

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  • 193nm far-ultraviolet photoetching rubber and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] In a state filled with an inert gas such as nitrogen, 3,4-dihydropyran (monomer 1, structural formula see formula II), maleic anhydride (monomer 2, structural formula see formula III), methacrylate Butyl ester (monomer 3, see formula IV for structural formula) and dioxane, add in the reaction bottle according to the weight ratio of 50:50:40:3400, then add the azobisisobutyronitrile (AIBN) of reaction dose, fully Stir, heat to 60-70°C with a water bath or an oil bath, and keep it for 4-5 hours to carry out the polymerization reaction. Then cool down to room temperature, add a sufficient amount of methanol, produce a large amount of precipitate, filter, recover, and dry to obtain the crude product of the film-forming resin shown in formula I. Next, use propylene glycol methyl ether acetate (PGMEA) as a solvent to dissolve the crude product of the film-forming resin, re-precipitate with a sufficient amount of methanol, filter and dry to obtain the finished film-forming res...

Embodiment 2

[0030] In a state filled with an inert gas such as nitrogen, 3,4-dihydropyran (monomer 1), maleic anhydride (monomer 2), tert-butyl methacrylate (monomer 3) and dichloro Add methane into the reaction bottle according to the weight ratio of 80:70:30:3600, then add the reaction dose of AIBN, stir well, heat to 70-80°C in water bath or oil bath, keep it for 5-6.5 hours to carry out polymerization reaction . Then cool down to room temperature, add a sufficient amount of diethyl ether to produce a large amount of precipitate, filter, recover, and dry to obtain the crude product of the film-forming resin shown in formula I. Next, using N-methylpyrrolidone (NMP) as a solvent, dissolve the crude film-forming resin, precipitate again with a sufficient amount of ether, filter, and dry to obtain the finished film-forming resin. Calculated according to the usage amount of monomer 1, the yield is 54%; GPC records the weight-average molecular weight M of the film-forming resin w It is 100...

Embodiment 3

[0032] In a state full of inert gas such as nitrogen, 3,4-dihydropyran (monomer 1), maleic anhydride (monomer 2), tert-butyl methacrylate (monomer 3) and tetrahydrofuran ( THF), add it into the reaction bottle according to the weight ratio of 80:60:30:4600, then add the reaction dose of AIBN, stir well, heat to 80-90°C in water bath or oil bath, keep it for 6.5-8 hours to make it polymerize reaction. Then cool down to room temperature, add a sufficient amount of diethyl ether to produce a large amount of precipitate, filter, recover, and dry to obtain the crude product of the film-forming resin shown in formula I. Next, using THF as a solvent, dissolve the crude product of the film-forming resin, precipitate again with a sufficient amount of methanol, filter, and dry to obtain the finished film-forming resin. Calculated according to the usage amount of (monomer 1), the yield is 48%; GPC records the weight-average molecular weight M of the film-forming resin w It is 15000-300...

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Abstract

A method for preparing 193nm far-ultraviolet photoetching includes using three monomers of 3,4-dihydropyran, maleic anhydride and methacrylate tert-butyl ester to join copolymerization simultaneously; leading alicyclic unit on main chain of macromolecule for obtaining film forming resin being used to prepare photoetching.

Description

technical field [0001] The invention relates to a photoresist used in manufacturing ultra-large-scale integrated circuit chips, in particular to a photoresist with 193nm far ultraviolet single-beam light as an exposure light source and a preparation method thereof, belonging to the technical field of microelectronic chemistry. Background technique [0002] Photoresist, also known as photoresist, refers to an etching-resistant film material whose solubility changes under the irradiation or radiation of ultraviolet light, electron beam, ion beam, X-ray, etc. Photoresist occupies a special position in the manufacturing process of integrated circuit chips. The higher the integration level of integrated circuits, the higher the requirements for photoresist. [0003] At present, advanced integrated circuit production lines all use projection exposure steppers. The smaller the line width of photolithography processing, the shorter the wavelength of the exposure machine, and differe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004
Inventor 常磊
Owner SUZHOU RUIHONG ELECTRONIC CHEM CO LTD