Chemical-mechanical polishing equipment and process

A chemical machinery and polishing machine technology, applied in polishing machine tools, metal processing equipment, manufacturing tools, etc., can solve the problems of inconsistent film thickness and wafer film thickness, and achieve the effect of reducing film thickness differences

Active Publication Date: 2009-04-08
UNITED MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the purpose of this invention is to provide a kind of chemical mechanical polishing equipment, to effectively solve the problem of inconsistent film thickness between each wafer
[0006] Another object of the present invention is to provide a chemical mechanical polishing process to effectively solve the problem of inconsistent film thickness between each wafer
[0007] Another object of the present invention is to provide a chemical mechanical polishing process to effectively solve the problem of inconsistent film thickness between each wafer

Method used

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  • Chemical-mechanical polishing equipment and process
  • Chemical-mechanical polishing equipment and process
  • Chemical-mechanical polishing equipment and process

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Embodiment Construction

[0025] The chemical mechanical polishing equipment of the present invention is at least composed of a polishing machine, a first thickness measuring instrument and a second thickness measuring instrument, wherein the first thickness measuring instrument is connected with the polishing machine, and the second thickness measuring instrument The instrument is connected with the polishing machine.

[0026] In a preferred embodiment, the first thickness measuring instrument is, for example, a metal thickness measuring instrument, and the second thickness measuring instrument is, for example, a dielectric material thickness measuring instrument. Among them, the metal thickness measuring instrument, for example, uses the reflected waves generated by laser at different interfaces (for example, the interface between the metal layer and the dielectric layer) to measure the thickness, and the dielectric material thickness measuring instrument, for example, uses Optical principles such as...

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Abstract

The chemico-mechanical polishing equipment consists of polishing machine, the first thickness measurer and the second thickness measurer connected to the polishing machine. Both the first thickness measurer and the second thickness measurer are used to complete the in-situ measurement of the thicknesses of the first material and the second material after polishing, and this can decrease the difference of chips in film thickness.

Description

technical field [0001] The invention relates to a semiconductor device and a process, in particular to a chemical mechanical polishing device and a chemical mechanical polishing process (Chemical Mechanical Polishing, CMP). Background technique [0002] The chemical mechanical polishing process is currently commonly used in the planarization of the film layer (Planarization). Polishing pads move relative to each other on the wafer surface to achieve planarization. [0003] The chemical mechanical polishing process has a wide range of applications, for example, the metal interconnection process is one of them. In the metal interconnection process, an opening is first etched in the dielectric layer, and then a lining layer is formed on the opening and the surface of the dielectric layer. Then, cover the metal layer filling the opening on the lining layer. Then, the chemical mechanical polishing process is used to sequentially remove the metal layer and the lining layer outs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B39/06H01L21/304
Inventor 胡俊汀谢祖怡曾子育郭永杰白弘吉
Owner UNITED MICROELECTRONICS CORP
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