32results about How to "Reduce film thickness variation" patented technology

A substrate processing apparatus includes a substrate holding unit that holds a substrate, an injection unit that injects droplets of a processing liquid from a plurality of injection ports respectively toward a plurality of collision positions within a principal surface of the substrate held by the substrate holding unit, and a liquid film forming unit. The liquid film forming unit discharges a protective liquid from a plurality of discharge ports respectively toward a plurality of liquid contact positions within the principal surface of the substrate held by the substrate holding unit to form a plurality of liquid films of the protective liquid that respectively cover different collision positions.

The conductive porous layer for batteries according to the present invention comprises a laminate comprising a first conductive layer and a second conductive layer. The first conductive layer includes at least a conductive carbon material and a polymer. The second conductive layer includes at least a conductive carbon material and a polymer. The conductive porous layer satisfies at least one of the following two conditions: “the polymer in the first conductive layer is present with a high density at the surface of the layer in contact with the second conductive layer than at the surface not in contact with the second conductive layer” and “the polymer in the second conductive layer is present with a higher density at the surface of the layer in contact with the first conductive layer than at the surface not in contact with the first conductive layer.”

An object of the present invention is to provide a laminate having food adhesion between a support and a conductive layer. The laminate of the present invention comprises a conductive layer A formed on a support, the conductive layer A containing a conductive carbon material and a polymer, the polymer in the conductive layer A being dense at the surface in contact with the support.

A plurality of fixed contacts and signal lines are provided on a fixed substrate. A movable contact which is closed or opened with the fixed contacts is provided on a movable substrate opposed to the fixed substrate. A film thickness of the fixed contacts is made to be smaller than that of the signal lines so that the movable contact is set in a concave portion constituted by the fixed contacts when the fixed contacts, and the movable contact are closed and the signal lines are linearly connected.

The invention discloses a display substrate, a preparation method thereof and a display device. The display substrate comprises an underlayer substrate, a pixel defining layer and a light-emitting structure layer, wherein the pixel defining layer is arranged on one side of the underlayer substrate, and a plurality of sub-pixel areas are defined by the pixel defining layer; and the light-emitting structure layer is arranged on the side, which is away from the underlayer substrate, of the pixel defining layer and located in the sub-pixel areas, the light-emitting structure layer comprises a holeinjection layer, and when hole injection ink is formed in the sub-pixel areas through an ink-jet printing method, the hole injection ink of at least two adjacent sub-pixel areas is communicated. According to the display substrate, the film thicknesses of the hole injection layers of at least two adjacent sub-pixel areas can be uniform, the film thickness difference between sub-pixels is reduced,and the brightness uniformity between the pixels is improved.

The present invention relates to a method and a device for polishing the surface of a substrate having film thickness unevenness in the circumferential direction of the substrate. Disclosed is a polishing method whereby: film thickness distribution in the circumferential direction of a substrate (W) is acquired; a first region having the largest or smallest film thickness is determined on the basis of the film thickness distribution; a polishing table (3) holding a polishing pad (2) is rotated; the surface of the substrate (W) is pressed to the polishing pad (2), while rotating the substrate by means of a polishing head (1); and the first region is polished at a removing rate that is different from the removing rate for a second region within the surface of the substrate (W).

A film formation method includes a preparation stage (S 10 ) and a process stage (S 20 ). In the preparation stage (S 10 ), a process time correction equation prepared to correct process time in accordance with atmospheric pressure is derived, based on a first relational equation that expresses a relationship between film thickness and process time, and a second relational equation that expresses a relationship between atmospheric pressure and film thickness (S 11 to S 14 ). In the process stage (S 20 ), process time is corrected, based on the process time correction equation thus derived and a measurement result of current atmospheric pressure, and then film formation is performed, based on process time thus corrected (S 21 to S 23 ).

The invention provides a device and method for improving process deviation of multi-chamber equipment. The device is arranged on a multi-chamber reaction gas path, one end of the interior of the device adopts a conical surface structure, and the other end of the interior of the device adopts a straight hole structure. According to the device and the method provided by the invention, the structure/operation is simple, the price is low, the problem of high-efficiency blocking of gas channeling can be achieved by reasonably setting the internal aperture, finally, the thickness difference of the wafer surface film between the chambers is reduced, and the yield of the wafer is improved.

The invention discloses a method for reducing silicon wafer film thickness difference in a furnace tube process. Each circulation process comprises the following steps of S1, introducing a first gas-phase precursor; S2, blowing the redundant first gas-phase precursor; S3, introducing a second gas-phase precursor for the first time; S4, introducing a second gas-phase precursor for the second time;and S5, blowing the redundant second gas-phase precursor; wherein the relationship, among the volume V0 of the second gas-phase precursors required in each circulation process, the flow S1 and the introduction time T1 of the second gas-phase precursor introduced for the first time, and the flow S2 and the introduction time T2 of the second gas-phase precursor introduced for the second time, is V0=S1xT1+S2xT2; and S1>S2. According to the method, on the premise of ensuring that the thickness of a thin film deposited in each circulation process is not changed, the concentration difference of precursor residual gas in a furnace tube is effectively reduced, the film thickness difference, caused by residual gas deposition, of silicon wafers at different positions in the furnace tube is reduced,and the thickness difference among the silicon wafers is improved.