Electronic device manufacturing method

Abstract

It is an object to provide a semiconductor device having a buried multilayer wiring structure in which generation of a resolution defect of a resist pattern is suppressed and generation of a defective wiring caused by the resolution defect is reduced. After a via hole (7) reaching an etching stopper film (4) is formed, annealing is carried out at 300 to 400 DEG C. with the via hole (7) opened. As an annealing method, it is possible to use both a method using a hot plate and a method using a heat treating furnace. In order to suppress an influence on a lower wiring (20) which has been manufactured, heating is carried out for a short time of approximately 5 to 10 minutes by using the hot plate. Consequently, a by-product staying in an interface of an upper protective film (6) and an interlayer dielectric film (5) having a low dielectric constant and a by-product staying in an interface of the etching stopper film (4) and the interlayer dielectric film (5) having a low dielectric constant are discharged so that an amount of the residual by-product can be decreased.

Description

technical field [0001] The present invention relates to a method of manufacturing an electronic device, in particular to a method of manufacturing an electronic device having a buried multilayer wiring structure. Background technique [0002] In the manufacturing method of a semiconductor device having a buried multilayer wiring structure, recently, in order to electrically connect the structure of the bottom layer arranged with an interlayer insulating film interposed therebetween and the upper layer wiring, a so-called double wiring method is used. Heavy metal mosaic (dual-damascene) method. This method is a method of simultaneously forming a plug penetrating an interlayer insulating film to reach a lower layer structure, and an upper layer wiring, and an example thereof is disclosed in Patent Document 1. [0003] That is, in Patent Document 1, a resist material is filled in a contact hole penetrating an interlayer insulating film to reach a semiconductor substrate, and t...

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Problems solved by technology

[0006] A chemically amplified resist has a structure in which hydrogen ions are generated by exposure to light and used as a catalyst to thermally react the resist resin to resolve patterns. However, in the case of using such a chemically amplified resist, the On the hole pattern, especially on the isolated hole pattern and the wiring pattern on the outermost hole of the densely arranged hole pattern, the normal resolution may not be possible, which may cause the phenomenon of so-called resist poisoning.

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