5results about How to "Reduce concentration difference" patented technology

This application relates to the field of two-dimensional semiconductor material preparation technology, specifically to a method for preparing monolayer molybdenum disulfide by dual-sulfur source chemical vapor deposition, comprising the following steps: Step 1, providing a chemical vapor deposition reaction chamber having an upstream region, a growth region, and a downstream region; Step 2, arranging a molybdenum-containing precursor in the growth region, and arranging a substrate above or opposite to the molybdenum-containing precursor; Step 3, arranging a first sulfur-containing precursor in the upstream region and a second sulfur-containing precursor in the downstream region; Step 4, introducing a carrier gas into the reaction chamber and heating it to cause the first sulfur-containing precursor, the second sulfur-containing precursor, and the molybdenum-containing precursor to volatilize and undergo a chemical vapor deposition reaction on the substrate surface to form a monolayer molybdenum disulfide. This invention employs a dual-sulfur source strategy, achieving large-size, uniform, and low-defect preparation of monolayer MoS2, facilitating widespread application.

The utility model discloses a boat structure, which comprises a supporting frame body and a plurality of supporting pieces fixedly arranged on the supporting frame body and arranged in a linear array, a bearing gap for accommodating a wafer is arranged between two adjacent supporting pieces, and the bearing gap comprises a mounting gap and a flow expanding gap. According to the boat structure, the flow expansion gaps are further arranged in the bearing gaps on the supporting frame body, and the center distance between adjacent wafers is increased, so that the circulation path of process gas is prolonged, the contact time of the process gas and the wafers is prolonged, the local gas concentration difference is reduced, the diffusion of the process gas is more uniform, and the yield of the wafer is improved. And the oxidation uniformity can be effectively improved by further reacting with the wafer, and the surface processing quality of the wafer is improved.

The application discloses a single-chip vapor deposition device and system, which comprises a base, an at least partially liftable baffle arranged around the base and surrounding a process chamber during a film forming process, a process gas inlet mechanism arranged on one side of the process chamber for supplying process gas, an exhaust port arranged in the process chamber, the exhaust port and the process gas inlet mechanism being arranged on opposite sides of the single-chip vapor deposition device, a wafer transfer port arranged on a side of the single-chip vapor deposition device different from the side where the process gas inlet mechanism and the exhaust port are arranged, and the baffle being provided with a first opening only on a side close to the process gas inlet mechanism, process gas flowing into the process chamber through the first opening, flowing horizontally on the surface of a substrate and epitaxially forming a film, and at least part of process gas not participating in a reaction and reaction byproducts being discharged from the exhaust port. The application can reduce the long velocity difference of process gas at the front and back of a substrate, so as to improve the crystal quality and film thickness uniformity of an epitaxial layer.

The utility model belongs to the technical field of flow batteries, and particularly relates to a gas circulation system of a flow battery. The flow battery gas circulation system comprises a positive electrode liquid storage tank, a negative electrode liquid storage tank, a gas inlet pipeline, a gas exhaust pipeline, a gas pressure balance pipeline and a gas transfer device, the upstream end of the air inlet pipeline is positioned above the liquid level of the positive electrode liquid storage tank; the downstream end of the gas inlet pipeline is communicated with the inlet of the gas transfer device; the outlet of the gas transfer device is communicated with the upstream end of the exhaust pipeline; the downstream end of the exhaust pipeline is located below the liquid level of the negative electrode liquid storage tank. And two ends of the air pressure balance pipeline are respectively communicated to positions above the liquid levels of the positive electrode liquid storage tank and the negative electrode liquid storage tank. The gas transfer and reactive gas absorption process is realized, volatile gas and toxic waste gas can be quickly and effectively absorbed, the pressure balance of the positive and negative electrode liquid storage tanks is maintained, the change of active components of the electrolyte during operation is avoided, and the safety and high efficiency of long-time operation of the flow battery are maintained.

This invention discloses a flavoring process for spicy bean product strips, belonging to the field of food processing and bean product seasoning technology. The method first prepares a gated seasoning liquid containing an aqueous phase and a phase-change flavor-locking oil phase, ensuring the pH of the gated seasoning liquid is 6.0–6.6 under degassing and 4.4–4.9 under carbon dioxide pressure equilibrium. Then, the spicy bean product strip blanks and the gated seasoning liquid are placed in a pressure-vacuum circulating impregnation vessel, and a breathing-style flavoring cycle is sequentially performed, involving vacuuming, carbon dioxide pressure holding, rapid depressurization, and re-vacuuming. This causes the bean protein gel network to undergo a contraction-rebound gated change between the near-isoelectric point and degassing recovery stages, thereby forming an active pump to absorb flavor. After the cycle is completed, the mixture is cooled to below 25°C, causing the phase-change flavor-locking oil phase to gel in situ, locking in the fat-soluble spicy flavor.