Chemical mechanical polishing (CMP) stepwise polishing method

A sub-grinding, chemical-mechanical technology, applied in the field of CMP step-by-step grinding, can solve the problem of large changes in residual film

Inactive Publication Date: 2011-07-06
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Abstract
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Problems solved by technology

like Figure 5 As shown, in the traditional chemical mechanical polishing, the grinding table 1 is affected by the height difference and density of the pattern, and the grinding rate is relatively fast. If the rate fluctuates at this time, the change of the residual film will be very large

Method used

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  • Chemical mechanical polishing (CMP) stepwise polishing method
  • Chemical mechanical polishing (CMP) stepwise polishing method
  • Chemical mechanical polishing (CMP) stepwise polishing method

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Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0022] The present invention reduces the thickness change of the front film by changing the chemical mechanical polishing process (grinding→front film measurement→grinding→residual film measurement), the difference in pattern distribution and the fluctuation of the remaining film thickness caused by the fluctuation of the grinding rate. The CMP analysis of the present invention The method of step grinding mainly includes the following steps:

[0023] The first step: take the product silicon wafer, and use the chemical mechanical grinding conditions of high speed and low pressure to grind the product silicon wafer for the first time, so as to reduce the difference caused by the front film thickness and pattern distribution. Speed ​​setting in this step: 93-112 rpm; pressure: 4-5 pounds per square inch. Grind at an interval of 15 sec, take the ...

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Abstract

The invention discloses a chemical mechanical polishing (CMP) stepwise polishing method. The method comprises the following steps: 1, polishing a product silicon wafer for the first time by adopting a chemical mechanical polishing condition with high rotating speed and low pressure so as to reduce the thickness of a front film and the difference caused by pattern distribution; 2, detecting the front film, and taking a detection result as basis of polishing for the second time; and 3, polishing the product silicon wafer for the second time by adopting the chemical mechanical polishing condition with low rotating speed and high pressure, and reducing the polishing time to reduce film thickness fluctuation caused by service life change of a consumables; and 4, detecting a residual film finally. By the method, the product difference or abnormal residual film thickness caused by fluctuation of polishing velocity can be reduced.

Description

technical field [0001] The invention relates to a manufacturing process method of a semiconductor integrated circuit, in particular to a CMP step-by-step grinding method. Background technique [0002] With the continuous reduction of the line width of the product silicon wafer, the requirements for the thickness and in-plane uniformity of the interlayer film of the silicon wafer are also getting higher and higher. However, in the production process of Chemical Mechanical Planarization (CMP), due to too many variable factors (such as the difference in the film quality and thickness of the front film, the difference in the distribution of product graphics and the influence of consumables on the grinding characteristics during the grinding process etc.) makes the stability of the traditional grinding process poor, which leads to increased fluctuations in the thickness and uniformity of the interlayer film after grinding. [0003] In the existing CMP (Chemical Mechanical Polish...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
Inventor 蔡晨倪立华金新张震宇
Owner SHANGHAI HUA HONG NEC ELECTRONICS
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