Image sensor and image sensor module
An image sensor and transfer transistor technology, applied in the field of CMOS image sensors, can solve the problem of slowing down the signal voltage reading action speed, achieve the effects of suppressing gate leakage current, suppressing noise, and reducing power consumption
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no. 1 Embodiment
[0057] This embodiment is an example of a CMOS image sensor in which the gate insulating film of the reset transistor and the detecting transistor in the pixel unit is formed thicker than the insulating film of the selection transistor and transistors of the peripheral circuit.
[0058] FIG. 6 is a cross-sectional view showing the CMOS image sensor of this embodiment. 6 shows elements in the pixel unit 14 and some elements of the peripheral circuit 12 and the input / output circuit 13 . In addition, the cross-sectional view of the pixel unit 14 in FIG. Figure 5 Active region 25 is shown cut away.
[0059] Referring to FIG. 6 , the CMOS image sensor is composed of a photosensor 31 , a pixel unit 14 composed of three n-channel MOS transistors 32 to 34 , a peripheral circuit 12 composed of MOS transistors, and an input / output circuit 13 . The three n-channel MOS transistors 32 to 34 in the pixel unit 14 are a reset transistor 32 , a detection transistor 33 , and a selection tran...
no. 2 Embodiment
[0094] This embodiment is an example of a CMOS image sensor in which the gate insulating films of the detection transistors, reset transistors, and selection transistors in the pixel unit are formed thicker than the gate insulating films of transistors in peripheral circuits.
[0095] FIG. 9 is a diagram showing a cross-sectional view of the CMOS image sensor of this embodiment. FIG. 9 shows elements in the pixel unit 14 and some elements of the peripheral circuit 12 and the input / output circuit 13 . Hereinafter, in the drawings, the same reference numerals are assigned to the parts corresponding to the parts described above, and the description thereof will be omitted.
[0096] Referring to FIG. 9, a CMOS image sensor 100 is composed of a pixel unit 14 composed of a photodiode 31 and three n-channel MOS transistors 32-34, a peripheral circuit 12 composed of MOS transistors 35, 36, and an input / output circuit 13. . Among them, the special feature is that a thick gate insulat...
no. 3 Embodiment
[0107] This embodiment is an example of a CMOS image sensor in which the gate insulating film of the reset transistor in the pixel unit is formed thicker than the gate insulating film of the detection transistor, the selection transistor, and the transistors of the peripheral circuit.
[0108] FIG. 11 is a diagram showing a cross-sectional view of a CMOS image sensor 110 of this embodiment. FIG. 11 shows elements in the pixel unit 14 , and some elements of the peripheral circuit 12 and the input / output circuit 13 . Hereinafter, in the drawings, the same reference numerals are assigned to the parts corresponding to the parts described earlier, and the description thereof will be omitted.
[0109] Referring to FIG. 11 , the CMOS transistor 110 is composed of a pixel unit 14 composed of a photodiode 31 and three n-channel MOS transistors, a peripheral circuit 12 composed of MOS transistors, and an input / output circuit 13 . Among them, the special feature is that a thick gate ins...
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