Semiconductor integrated circuit

A technology of semiconductors and constant current circuits, applied in the manufacture of semiconductor devices, circuits, and semiconductor/solid-state devices, etc., can solve the problems of different currents, voltages, wiring resistance values, and difficulty in correctly controlling the current value.
CN100481450CInactive Publication Date: 2009-04-22SII SEMICONDUCTOR CORP
5 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SII SEMICONDUCTOR CORP
Publication Date
2009-04-22
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The purpose of the present invention is to provide a semiconductor device capable of controlling an accurate current value. In the semiconductor integrated circuit provided with constant current circuit, the constant current circuit has plural constant current devices having common gate terminal and source terminal. Different drain terminals of the constant current device, which is disposed on one side of the gate terminal and the source terminal, are disposed on both sides of the gate terminal and the source terminal.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a circuit configuration for uniformly controlling the current value of each channel in a constant current circuit using a plurality of constant current elements outputting a desired current ratio. Background technique

[0002] FIG. 3 shows a configuration diagram showing the arrangement of N constant-current elements of a conventional constant-current circuit that outputs the same current. Conventionally, in a constant current circuit using a plurality of P-type or N-type MOS transistors as constant current elements that output a desired current ratio, as shown in FIG. 3 , the constant current elements of each channel are laid out for each element. Structure. Furthermore, the gate terminal 1 and the source terminal 2 are shared by each constant current element. In addition, the first drain terminal 6 corresponding to the first output terminal channel 3, the second drain terminal 7 corresponding to the second output te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More