Polymer film based miniature cell clamp and preparing process thereof
A preparation process and polymer technology, applied in metal material coating process, biochemical instruments, biochemical equipment and methods, etc., can solve the problems of environment and operation object influence, large power consumption, etc., and achieve low power consumption and high output power Large, large electric actuation displacement effect
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Embodiment 2
[0049] The difference from Example 1 is that (see Figure 4 ):
[0050] 1) growing an oxide layer 7 of 1 micron on the silicon substrate 4 as an insulating layer;
[0051] 2) Sputtering aluminum with a thickness of 0.5 microns;
[0052] 3) A gold film 2 is deposited by sputtering as the lower electrode, and the known Lift-off suspension technology is used to realize graphic micromachining at the same time; the thickness is 0.5 microns;
[0053] 4) The thickness of NAFION film 3 is 0.5 micron;
[0054] Among them: before step 3), electron beam evaporation (e-beam evaporation) technology is used to deposit silicon dioxide layer 5 and chromium (or titanium) layer 6 in sequence, and step 3) is used to simultaneously realize silicon dioxide , chromium (or titanium) and the micrographic processing of the lower electrode film; wherein the silicon dioxide layer 5 is mainly used to increase the contact surface between the fixed end of the cantilever beam and the substrate and increa...
Embodiment 3
[0056] The difference from Example 3 is that (see Figure 5 ):
[0057] 1) growing a 2-micron oxide layer 7 on the silicon substrate 4 as an insulating layer;
[0058] 2) Sputtering aluminum with a thickness of 0.7 microns;
[0059] 3) A gold film 2 is deposited by sputtering as the lower electrode, and the known Lift-off suspension technology is used to realize graphic micromachining at the same time; the thickness is 0.15 microns;
[0060] 4) The thickness of NAFION film 3 is 0.3 micron;
[0061] Wherein: before step 7), the PARYLENEN-C film 1 is deposited on the upper and lower electrodes and the connecting lines connected with the upper and lower electrodes at room temperature. Erosion; Step 6) Using the photoresist AZ5214 as a mask, the oxygen plasma etching technique is used to process the micropattern.
Embodiment 4
[0063] The difference with embodiment 3 is:
[0064] Such as Figure 6 As shown, the present invention uses electron beam evaporation (e-beam evaporation) technology to separately deposit silicon dioxide layer 5, chromium or titanium layer 6 before step 3), and the present embodiment deposits silicon dioxide layer 5 separately; and 2 silicon dioxide layers Substrate NAFION microcantilever (gold / NAFION / gold sandwich structure).
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Abstract
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