Organic electro-white light device and producing method thereof
A white light device and electroluminescence technology, applied in the direction of electric solid state devices, electroluminescent light sources, chemical instruments and methods, etc., can solve the problems of low efficiency and achieve the effect of improving utilization
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Embodiment 1
[0069] Example 1 (device number OLED1)
[0070] OLED1 is prepared by the method of preparing the device represented by structural formula (1).
[0071] The hole transport layer in OLED1 uses NPB, the organic light-emitting layer uses DCB as the host material, the phosphorescent dye uses FIrpic and the red dye uses DCJTB, the electron transport layer uses Bphen, and the cathode layer uses Mg:Ag alloy and Ag.
[0072] Glass / ITO / NPB / DCB: FIrpic: DCJTB / Bphen / Mg:Ag / Ag
[0073] The preparation method is as follows:
[0074] ① Use hot detergent ultrasound and deionized water ultrasound to clean the transparent conductive substrate ITO glass. After cleaning, place it under an infrared lamp to dry, and then perform ultraviolet ozone cleaning and low-energy oxygen on the dried ITO glass. Pretreatment of ion beam bombardment, where the ITO film on the conductive substrate is used as the anode layer of the device, the sheet resistance of the ITO film is 15Ω, and the film thickness is 200nm;
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Embodiment 2
[0080] Example 2 (device number OLED2)
[0081] OLED2 is prepared by the method of preparing the device represented by structural formula (1).
[0082] In OLED2, the organic light-emitting layer adopts CBP as the host material, the phosphorescent dye adopts FIr6 and the red dye adopts DCM, the electron transport layer adopts BAlq, and the cathode layer adopts alternating layers of LiF and Al.
[0083] Glass / ITO / CBP:Fir6: DCM / BAlq / LiF / Al
[0084] The method for preparing the light-emitting layer and electron transport layer in OLED2 is the same as that of Example 1, wherein the film thickness of the light-emitting layer is 30nm, the doping concentration of FIr6 is 3wt%, the doping concentration of DCM is 0.05wt%, and the film thickness of BAlq is 40nm.
[0085] The method of preparing the cathode layer is as follows: keeping the pressure in the vacuum chamber unchanged, and sequentially vapor-depositing a LiF layer and an Al layer on the BAlq electron transport layer as the cathode...
Embodiment 3
[0087] Example 3 (device number OLED3)
[0088] OLED3 is prepared by the method of preparing the device represented by structural formula (2).
[0089] Glass / ITO / PEDOT / PVK:PBD:FIrpic:Rubrene / Bphen / Mg:Ag / Ag
[0090] The preparation method is as follows:
[0091] ① Use hot detergent ultrasound and deionized water ultrasound to clean the transparent conductive substrate ITO glass. After cleaning, place it under an infrared lamp to dry, and then perform ultraviolet ozone cleaning and low-energy oxygen on the dried ITO glass. The pretreatment of ion beam bombardment, where the ITO film on the conductive substrate is used as the anode layer of the device, the sheet resistance of the ITO film is 30Ω, and the film thickness is 200nm;
[0092] ②First, spin-coated a layer of 60nm thick PEDOT as the anode buffer layer, and dried it with an infrared lamp. PVK is used as the matrix and hole transport material, and PBD is used as the electron transport material. PVK and PBD are dissolved in chl...
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