Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Semiconducting laser device

A laser and semiconductor technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of inability to obtain the ray quality and output power of semiconductor laser devices, and achieve the effect of convenient processing and simple adjustment

Inactive Publication Date: 2009-08-05
LIMO PATENTVERWALTUNG GMBH & CO KG
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above two methods for optimizing the transverse wave modes require considerable processing costs, and also cannot obtain truly satisfactory ray quality and output power of semiconductor laser devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconducting laser device
  • Semiconducting laser device
  • Semiconducting laser device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0034] Depend on Figure 1a and Figure 1b It can be seen that a first embodiment of a semiconductor laser device according to the invention comprises a semiconductor laser element 1, a lens device 2 designed in particular as a fast-axis collimator mirror, and at least one reflection device 3 formed by a concave mirror . In this case, a reflective concave surface 4 facing the semiconductor laser element 1 together with a semiconductor laser element light exit surface 5 facing the reflector 3 forms an external resonator.

[0035] The semiconductor laser element 1 is formed in particular as a semiconductor laser diode and is designed here in particular as a broadband transmitter. In a broadband transmitter, the Figure 1a and Figure 1b has an emitting surface on the right side of it in the X direction (see Figure 1a ) has an extension of, for example, 100 μm, while in the Y direction (see Figure 1b ) has an extension of eg 1 μm. So in one such broadband transmitter one re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor laser device, comprising a semiconductor laser element (1) having at least one light-emitting surface (5), from which a laser ray can be emitted, and the laser ray has a ratio in a first direction (Y) perpendicular to it Greater divergence in the second direction; an external resonator with at least one reflective device (3, 9) having a reflective surface (4, 10) capable of diverting at least a portion of the semiconductor laser element ( 1) The laser rays emitted by the light-emitting surface (5) are reflected back in the semiconductor laser (1), so that the wave mode spectrum of the semiconductor laser (1) is affected thereby, and a reflector (3, 9) and semiconductor Lens means (2) in the external resonator between the laser elements (1), which at least partially reduce the divergence of the laser beam in at least a first direction (Y), wherein said reflecting means (3, 9) The reflecting surface (4, 10) is concavely curved.

Description

technical field [0001] The invention relates to a semiconductor laser device comprising a semiconductor laser element having at least one light-emitting surface from which laser rays can be emitted, the laser rays having a greater ratio in a first direction than in a second direction perpendicular thereto. Greater divergence also includes at least one reflective device with a reflective surface arranged outside the semiconductor laser element at intervals from the light-emitting surface, and this reflective surface can reflect back at least a part of the laser rays emitted by the semiconductor laser element through the light-emitting surface In a semiconductor laser, thereby affecting the mode spectrum of the semiconductor laser, the device also includes a lens device arranged between the reflecting device and the semiconductor laser element, which can at least partially reduce the divergence of the laser beam in at least a first direction Small. Background technique [000...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14H01S3/08
CPCH01S5/0654H01S3/08059H01S5/14H01S5/141
Inventor 阿里克西·米可哈洛夫威兰德·希尔
Owner LIMO PATENTVERWALTUNG GMBH & CO KG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com