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Pixel structure

A pixel structure and metal layer technology, applied in optics, instruments, transistors, etc., can solve problems such as signal distortion, affect pixel voltage, and reduce the display quality of liquid crystal displays, so as to reduce the effect of parasitic capacitance and improve display quality.

Active Publication Date: 2009-08-26
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In other words, there are parasitic capacitances between the gate 122 and the source 152 and the drain 154, and between the scan wiring 124 and the data wiring 156, and these parasitic capacitances will not only cause signal distortion, but also affect the pixel voltage. And then reduce the display quality of the LCD display

Method used

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no. 1 example

[0047] image 3 is a top view of the pixel structure of the first embodiment of the present invention, and Figure 4A for image 3 The sectional view of the line II-II' in the middle. Please refer to image 3 and Figure 4AThe pixel structure 200 of this embodiment includes a substrate 210 , a first metal layer 220 , a dielectric layer 230 , a semiconductor layer 240 , a second metal layer 250 , a patterned floating metal layer 260 and a pixel electrode 270 . Wherein, the first metal layer 220 is disposed on the substrate 210 , and the first metal layer 220 includes a gate 222 and a scanning wire 224 electrically connected to the gate 222 . The dielectric layer 230 is disposed on the substrate 210 and covers the first metal layer 230 , and the semiconductor layer 240 is disposed on the dielectric layer 230 above the gate 222 . In addition, the second metal layer 250 includes a source electrode 252 , a drain electrode 254 and a data wiring 256 . The source electrode 252 an...

no. 2 example

[0054] Figure 7 is a top view of the pixel structure of the second embodiment of the present invention, and Figure 8 for Figure 7 The cross-sectional view of the line V-V' in the middle. Please refer to Figure 7 and Figure 8 , in order to save the photolithographic mask cost, the photolithographic mask used when forming the patterned floating metal layer 260 in this embodiment is the same as the photolithographic mask used when forming the second metal layer 250, so the patterned floating metal layer 260 The pattern of the metal layer 260 is the same as that of the second metal layer 250 . In addition, since the pattern of the patterned floating metal layer 260 is the same as that of the second metal layer 250, compared with the semiconductor layer 240 of the first embodiment, the semiconductor layer 240a of this embodiment needs to extend to cover the drain electrode 254. The floating metal layer 260 is patterned to prevent the patterned floating metal layer 260 fro...

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Abstract

A pixel structure includes a substrate, a first metal layer, a dielectric layer, a semiconductor layer, a second metal layer, a patterned floating metal layer and a pixel electrode. The first metal layer is disposed on the substrate, and includes a gate and a scan wiring electrically connected to the gate. The dielectric layer is disposed on the substrate and covers the first metal layer, and the semiconductor layer is disposed on the dielectric layer above the gate. The second metal layer includes a source electrode, a drain electrode and data wiring, and the source electrode and the drain electrode are arranged on the semiconductor layer and partially overlap with the gate electrode. The data wiring is electrically connected to the source, and partially overlaps with the scanning wiring. The pixel electrode is electrically connected to the drain. The patterned floating metal layer is disposed between the dielectric layer and the semiconductor layer, and is located below the source and the drain, wherein part of the patterned floating metal layer is located in the area above the gate, and does not completely cover the area above the gate.

Description

technical field [0001] The present invention relates to a pixel structure of a thin film transistor array substrate (TFT array substrate), and in particular to a pixel capable of reducing parasitic capacitance between a first metal layer and a second metal layer structure. Background technique [0002] The rapid progress of the multimedia society is mostly due to the dramatic progress of semiconductor devices or display devices. As far as displays are concerned, cathode ray tubes (cathode ray tubes, CRTs) have been monopolizing the display market in recent years due to their excellent display quality and economical efficiency. However, for the environment where individuals operate multiple terminals / display devices on the table, or from the perspective of environmental protection, if the trend of energy saving is predicted, there are still many problems in the space utilization and energy consumption of cathode ray tubes. However, there is no effective solution to the requ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/136G02F1/133H01L29/786
Inventor 周瑞渊
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD