Non-polarized composite gallium nitride base substrate and production method

Abstract

The disclosed non-polar composite GaN-based substrate comprises overlays between the substrate and the GaN extension layer reflection / ohm / stress buffer layer. Wherein, the preparation method for the substrate comprises: on the growth substrate, growing middle medium layer (or crystal kernel) and the non-polar first GaN-based extension layer in turn; overlaying the mask layer; etching the mask to form the GaN window and mask layer strip; growing the non-polar second GaN extension layer; overlaying the reflection / ohm / stress buffer layer; bonding substrate; peeling the substrate, medium layer, the first extension layer, mask strip, and the part with hole on the second extension layer; exposing other part of the second extension layer for thermal treatment.

Description

technical field [0001] The invention discloses a non-polar compound gallium nitride base substrate, which belongs to the technical field of semiconductor electronics. Background technique [0002] Currently, in industry, c-sapphire substrate is used as one of the main growth substrates for growing GaN-based devices (including GaN-based LEDs). However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device. (2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved. [0003] In order to overcome the above-mentioned deficiencies, industries and research institutions adopt the following schemes. (1) In order to eliminate the built-in polarization el...

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Problems solved by technology

However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device

(2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved

[0004] However, the disadvantage of the lateral epitaxy method in scheme (1) is that there are voids in the gallium nitride-based epitaxial layer, which is easy to deform at high temperature, and the device is easy to be broken down, etc.

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