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Pixel array of electroluminescent cell

An electroluminescent element and pixel matrix technology, which is applied in the field of electroluminescent element pixel matrix and TFT circuit layout improvement, can solve problems such as poor efficiency, shortened laser service life, and increased time for laser annealing processes

Active Publication Date: 2009-10-21
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is known that this method will increase the time of the laser annealing process, and because the duty cycle between laser pulses is also increased, the service life of the laser will be shortened.
[0007] Known AMOLED layouts lead to poor process performance since most of the energy of the laser is directed to unwanted areas of the amorphous silicon layer
Also, when excimer laser tool life is shortened, it will cause unnecessary cost of laser energy

Method used

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  • Pixel array of electroluminescent cell
  • Pixel array of electroluminescent cell
  • Pixel array of electroluminescent cell

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Embodiment Construction

[0043] figure 2 and Figure 3a It is a schematic diagram showing an AMOLED circuit layout according to an embodiment of the present invention. As shown, the AMOLED TFT backplane 200 has an improved AMOLED circuit layout. As shown in the figure, the AMOLED circuit is disposed on the TFT backplane 200 , and the TFT circuit part 212 of a part of the AMOLED pixel 210 constitutes a TFT circuit gathering area 225 . The thin film transistor circuit gathering area 225 is roughly matched to the area covered by the linear laser 220 . The TFT gathering area in the pixel row A is a row of thin film transistor circuit arrays. The OLED gathering area in pixel row A is a row of OLED pixel arrays.

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Abstract

An electroluminescent pixel matrix on a thin film transistor backplane with improved layout. By arranging the positions of the electroluminescence gathering area and the thin film transistor circuit gathering area in the electroluminescent pixel matrix, the thin film transistor circuit is a gathering area. Therefore, in the laser annealing process, each laser pulse can irradiate a large number of Amorphous silicon layer for thin film transistor circuits to improve the efficiency of the laser annealing process.

Description

technical field [0001] The present invention relates to an electroluminescence (electroluminescence, EL) display panel, in particular to a TFT circuit layout improvement on a thin film transistor back panel (TFT back panel), which is applicable to active matrix organic electroluminescence (Active Matrix) Organic Electroluminescence) component display panel design. In particular, the invention relates to pixel matrices of electroluminescent elements. Background technique [0002] In a general Active Matrix Organic Electroluminescence (AMEL for short) display panel, a thin film transistor (Thin Film Transistor; TFT for short) circuit is formed on a TFT backplane of the display panel. TFT generally has a polysilicon layer as a semiconductor layer, and may be a bottom gate type or a top gate type, such as a low temperature polysilicon (low temperature poly-silicon) thin film transistor. In order for the TFT to work optimally, the polysilicon layer requires high electron mobili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H05B33/12H01L21/268H01L21/77H01L27/12H01L27/32H01L29/04H05B44/00
CPCH01L27/3262H01L27/3244H01L27/1285H01L21/268H01L27/1296H10K59/1213H10K59/12
Inventor 黄维邦施立伟
Owner AU OPTRONICS CORP