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Semiconductor photodetector with internal reflector and its manufacture method

A photodetector, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, photovoltaic power generation, etc., can solve problems such as absorption and detection problems

Inactive Publication Date: 2009-10-28
HOYA美国公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the layers in the active regions of the photodetectors formed on the substrates are also substantially parallel to these substrates, which in many cases makes the absorption and detection of light by photodetectors problematic

Method used

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  • Semiconductor photodetector with internal reflector and its manufacture method
  • Semiconductor photodetector with internal reflector and its manufacture method
  • Semiconductor photodetector with internal reflector and its manufacture method

Examples

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Embodiment Construction

[0041] Figure 2A and 2BA typical photodetector with an internal reflector is represented. A semiconductor substrate 302 is spatially selectively processed to form adjacent substrate upper surface regions 301 and 303 which are at different heights and are separated by an input surface 304 . Through spatially selective processing, a reflective surface 306 is formed on the upper surface of the substrate (boundary region 303). An n-type semiconductor layer 310 (ie, n-layer), an intrinsic semiconductor layer 312 (ie, i-layer), and another n-layer 314 are formed on the upper surface region 303 of the substrate. A typical material for making III-V semiconductor detectors is semi-insulating InP, ie, substrate 302 is n-type InP, n-layers 310 and 314 are n-type InP, and i-layer 312 is InGaAs. The upper n-layer may be spatially selectively doped to create a p-type region 316 (ie, p-layer). Alternatively, the p-type layer may be initially present (instead of n-layer 314) and space-se...

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Abstract

A photodetector includes: a semiconductor substrate having an input surface and a reflection surface formed on the upper surface of the substrate. The reflective surface forms an acute angle with the surface of the substrate and is positioned such that light beams transmitted through the input surface into the substrate are reflected from within the reflective surface onto the upper surface of the substrate. A photodetector active region is formed on the upper surface of the substrate and positioned such that the reflected light beam is incident on the active region. A photodetector may be mounted on the second substrate, and it may receive light from a planar waveguide formed on the second substrate or an optical fiber mounted in a groove on the second substrate.

Description

technical field [0001] The field of the invention relates to semiconductor photodetectors. In particular, a semiconductor photodetector incorporating an internal reflector is described herein. Background technique [0002] Figure 1A and 1B A general configuration including a planar waveguide 120 on a waveguide substrate 101 is shown. A surface mounted photodetector 110 is placed on the waveguide substrate 101 (either directly, or on its alignment / support) for detecting the optical power propagating from the output facet of the waveguide 120 . Figure 1C and 1D represents another general configuration, which includes placing an illuminated photodetector 110 in an alignment groove 152 (surface mounted to a recessed substrate 151, such as Figure 1C and 1D shown, or fabricated directly onto a grooved substrate) optical fiber 150. The reasons for utilizing photodetectors in this environment are manifold. For example, the optical power propagating through waveguide 120 or...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/02H01L31/0232G02B6/26G02B6/42H01LH01L21/00H01L31/0352H01L31/101H01L31/105H01L31/107H01L31/16H01L31/18H10N10/856
CPCH01L31/101H01L31/035281G02B6/4214H01L31/105G02B6/4204H01L31/107Y02E10/50H01L31/0232H01L31/02325H10N10/856
Inventor 亨利·A·布劳维尔特大卫·W·维尔努伊李浩
Owner HOYA美国公司