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Substrate placement in immersion lithography

A technology for substrates and substrate testing, applied in the direction of optical devices, microlithography exposure equipment, photolithography exposure devices, etc., can solve unpredictable and unexpected problems

Active Publication Date: 2009-12-02
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This requires additional or more powerful electric motors, and turbulence in the liquid may cause undesirable and unpredictable effects

Method used

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  • Substrate placement in immersion lithography
  • Substrate placement in immersion lithography
  • Substrate placement in immersion lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The unit includes:

[0043] an illumination system (illuminator) IL configured to adjust a radiation beam PB (eg UV radiation or DUV radiation);

[0044] a support structure (eg, mask table) MT configured to support a patterning device (eg, a mask) MA, connected to a first positioning device PM configured to accurately position the patterning device according to certain parameters;

[0045] a substrate table (such as a wafer table) WT configured to hold a substrate (such as a resist-coated wafer) W connected to a second positioning device PW configured to accurately position the substrate according to certain parameters; and

[0046] A projection system (eg, a refractive projection lens system) PL configured to project the pattern applied to the projection beam PB by the patterning device MA onto a target portion C of the substrate W (eg, comprising one or m...

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PUM

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Abstract

A method for determining an offset (”) between a center of a substrate (C s ) and a center of a depression (C D ) in a chuck (WT) includes providing a test substrate (W) to the depression (DP), the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.

Description

technical field [0001] The invention relates to a lithography apparatus, especially an immersion lithography apparatus, and a method for arranging a substrate in an immersion lithography apparatus. Background technique [0002] A lithographic apparatus is a machine that can apply a desired pattern on a substrate, usually a target portion of the substrate. A lithographic apparatus may be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device, also known as a mask or reticle, may be employed to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred to a target portion (eg, comprising one or more dies) on a substrate (eg, a silicon wafer). Transfer of the pattern is usually accomplished by means of imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. Typically, a single substrate contains a network of adjacent target portions that are succe...

Claims

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Application Information

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IPC IPC(8): G03F7/20H01L21/027
CPCG03F7/70341G03F9/7011G01B11/26G03F7/707G03F7/70775G01B11/14G01B11/272G03F7/70716
Inventor C·A·胡根达姆G·J·尼梅杰M·库佩鲁斯P·A·W·C·M·范埃克
Owner ASML NETHERLANDS BV