Method for preparing highly pure cadmium telluride

Abstract

A preparation method of high-purity cadmium telluride, which is characterized in that 5N tellurium and 5N cadmium are mixed in a molar ratio of 1:1, and the mixture is pulverized or ground into pellets with a particle size of 8-13 μm, 500 ~600 parts by weight of pellets are put into the quartz tube (5), vacuumized to 1~1.2Pa and sealed, then the sealed quartz tube is put into the cadmium telluride synthesis furnace (1), and the synthesis furnace is equipped with Insulation layer (2), heating wire (3), heat insulation plate (4) and quartz tube (5), the heat insulation plate divides the furnace cavity of the synthesis furnace into multiple synthesis chambers, and each synthesis chamber is placed with multiple sealed For the quartz tube with tellurium and cadmium pellets, turn on the heating system of the synthesis furnace and raise the temperature at a rate of 90-100°C / hour. When the temperature of the synthesis furnace rises to 115-125°C, react at a constant temperature for 30-40 minutes. The temperature is lowered at a rate of ~80°C / hour, and the material is discharged at room temperature to obtain 490-590 parts by weight of 5N cadmium telluride product, and the conversion rate is 98-99%.

Description

technical field [0001] The invention relates to a preparation method of cadmium telluride, belonging to the field of preparation of cadmium telluride. Background technique [0002] Cadmium telluride is a semiconductor compound with a bandgap of 1.42EV. This material is widely used in infrared detection and detection of capsules and solar cells. With the rapid development of the photovoltaic power generation industry, the demand for cadmium telluride at home and abroad is also increasing rapidly. The traditional production of cadmium telluride is the gas phase synthesis method. chemical production. Chinese patent 200610040977.1 discloses a low-temperature solvothermal growth method for cadmium telluride single crystal, which is characterized in that the reactants water-soluble cadmium salt, tellurium source and reducing agent are dissolved in a mass of 30-45ml according to the molar ratio of 1:1:2-3 In the ammonia solvent with a ratio of 20-30%, airtightly react at 160-200°...

AI Technical Summary

Problems solved by technology

With the rapid development of the photovoltaic power generation industry, the demand for cadmium telluride at home and abroad is also increasing rapidly. The traditional production of cadmium telluride is the gas phase synthesis method. chemical production

Chinese patent 200610040977.1 discloses a low-temperature solvothermal growth method for cadmium telluride single crystal, which is characterized in that the reactants water-soluble cadmium salt, tellurium source and reducing agent are dissolved in a mass of 30-45ml according to the molar ratio of 1:1:2-3 In an ammonia solvent with a portion of 20-30%, airtightly react at 160-200°C for no less than 3 days, and naturally cool the room temperature to obtain a single crystal of cadmium telluride. This method is relatively stable to air, but the reaction is slow. Long production cycle

Far from meeting the growing market needs

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