Unlock instant, AI-driven research and patent intelligence for your innovation.

Polishing composition

A technology of polishing composition and polishing powder, applied in the field of polishing composition

Active Publication Date: 2010-01-06
FUJIMI INCORPORATED
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, polishing compositions containing benzotriazoles are problematic

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing composition
  • Polishing composition
  • Polishing composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] An example will be described below.

[0012] First, according to Figures 1(a) to 1(c) A method of forming a circuit of a semiconductor device will be described. A wiring of a semiconductor device is generally formed as follows. First, as shown in FIG. 1( a ), on the insulating layer 12 formed on a semiconductor substrate (not shown in the figure) and having a trench 11 , a barrier layer 13 and a conductive layer 14 are sequentially and continuously formed. Thereafter, at least part of conductive layer 14 outside trench 11 (outside of conductive layer 14 ) and at least part of barrier layer 13 outside trench 11 (outside of barrier layer 13 ) are removed by chemical mechanical polishing. As a result, as shown in FIG. Part remains on the insulating layer 12. The portion 14 of the conductive layer remaining on the insulating layer 12 becomes the wiring of the semiconductor device.

[0013] The insulating layer 12 is formed of, for example, silicon oxide, fluorine-doped...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a polishing composition containing a triazole having a six-membered ring backbone, a water-soluble polymer, an oxidizing agent and abrasive grains. The triazole has a hydrophobic functional group in the six-membered ring backbone. The triazole content in the polishing composition is not more than 3 g / L, and the pH of the polishing composition is not less than 7. This polishing composition can be suitably used in polishing performed for forming wiring in a semiconductor device.

Description

technical field [0001] The present invention relates to a polishing composition used, for example, in polishing for forming wiring of a semiconductor device. Background technique [0002] The first step in the formation of semiconductor device circuits is to sequentially and continuously form a barrier layer and a conductive layer on the insulating layer with trenches. Then, at least part of the conductive layer outside the trench (outside of the conductive layer) and at least part of the barrier layer outside the trench (outside of the barrier layer) are removed by chemical mechanical polishing. Polishing to remove at least the outer portion of the conductive layer and the outer portion of the barrier layer is usually performed in two separate steps: a first polishing step and a second polishing step. In the first polishing step, part of the outer portion of the conductive layer is removed, exposing the upper surface of the barrier layer. In a subsequent second polishing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304B24B37/00C09K3/14
Inventor 平野达彦浅野宏堀和伸
Owner FUJIMI INCORPORATED