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Method for using three-dimensional function for mask specification institution

A mask and function technology, which is applied in the field of making specifications for designing masks, can solve problems such as increased cost, inaccurate judgment, and reduced mask yield, and achieves the effect of improving yield and precise control.

Active Publication Date: 2010-01-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual use, the above-mentioned judgment is not accurate in many cases. In the triangle area indicated by a slash in the upper left corner and the lower left corner of the rectangle (these two triangle areas are only examples of specific applications, not general references) ), although the MTT value and CDU value of the mask still meet the above-mentioned fixed tolerance (-7.5, 7.5), (-6, 6), but when the mask whose value meets this area is applied to the actual production wafer, it will be due to the mask Die errors cause patterned features on the wafer to behave beyond the tolerances of the lithography process
In order to avoid such problems, in actual use, the MTT value and CDU value specifications of the mask are usually only reduced. This method substantially improves the mask level, but it will undoubtedly lead to a decrease in the yield of mask production and an increase in cost.

Method used

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  • Method for using three-dimensional function for mask specification institution
  • Method for using three-dimensional function for mask specification institution
  • Method for using three-dimensional function for mask specification institution

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Embodiment 1

[0030] Mask Specifications Using 3D Functions

[0031] In the integrated circuit manufacturing process, the mask specifications used in the photolithography process should be considered based on the most critical factors that can affect the critical dimension deviation on the wafer. In the embodiments of the present invention, these factors are attributed to three aspects: MTT value, CDU value, and nominal on-rule proximity effect value (nominal on-rule proximity).

[0032] The first step that the method of the present invention implements is to collect a large amount of wafer critical dimension deviation data caused by mask errors, and the errors include the MTT value deviation of the main pattern feature of the mask, the cross mask CDU value (cross mask CDU ) and the performance of the optical approximation effect of different masks, the mask patterns used are such as figure 2 shown;

[0033] Organize the wafer database collected in the above steps, as shown in Table 1 be...

Embodiment 2

[0040] Formulate the specification of mask making with three-dimensional function, and simplify the mask specification defined by two-dimensional function based on this

[0041] For a real mature and well-controlled mask process, the three-dimensional function of the mask specification in Embodiment 1 can be simplified to a two-dimensional numerical range, such as image 3 As shown, still in the two-dimensional coordinate system formed by the MTT value and the CDU value, the outline of the three-dimensional function in this two-dimensional plane is drawn. In this embodiment, the MTT axis is defined as the x-axis, and the CDU axis is defined as the y-axis , the optical approximation effect axis is the z-axis.

[0042] The x and y axes represented by the MTT value and the CDU value are substantially the same as the three-dimensional coordinate system of Embodiment 1, so the projection of the above-mentioned three-dimensional functional curved surface on the two-dimensional plane...

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Abstract

The invention relates to a method of utilizing a three-dimensional function in the development of mask specifications, which adopts three parameters to control the mask specifications: MTT value, CDU value and optical approximate effect value. When a key size of developing integrated circuit manufacturing process to pattern characteristics gradually approaches the limit of optical resolution, impact of optical approximate effect on the production of a mask is increasingly obvious. The method of the invention is designed on the basis, and the invention can improve the yield of the production of the mask and lower the production cost in the actual usage. Moreover, the invention can indirectly increase the product yield in the production of integrated circuits.

Description

technical field [0001] The invention relates to a mask making process in an integrated circuit manufacturing process, in particular to a method for formulating design mask making specifications. Background technique [0002] At present, when formulating production specifications for masks used in lithography, usually only two values ​​are defined, the difference between the mean value and the target value (MTT, Mean To Target) and critical dimension uniformity (CDU, CriticalDimension Uniformidty). With the continuous progress of the process, the mask design rules are further reduced, and the critical dimension (CD, Critical Dimention) of the pattern feature of the semiconductor device is gradually approaching the limit of the optical resolution. Therefore, in practical applications, there are more and more cases where some masks meet the predetermined specifications, that is, their MTT values ​​and CDU values ​​are within the specifications, but the masks are used in lithogr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/00G03F7/00H01L21/00G03F1/36
Inventor 洪齐元高根生刘庆炜
Owner SEMICON MFG INT (SHANGHAI) CORP