Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integrated amplifier arrangement

A technology of amplifiers and couplers, which is applied in the field of amplifier systems and can solve problems such as expensive processing costs

Inactive Publication Date: 2010-01-27
TELEFON AB LM ERICSSON (PUBL)
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, it is expensive to machine because the positioning and coupling of such discrete elements must be performed with high precision in order to reproduce the desired characteristics of the machined amplifier.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated amplifier arrangement
  • Integrated amplifier arrangement
  • Integrated amplifier arrangement

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] exist figure 1 The semiconductor substrate 1 shown in the middle section has the following structures: a first amplifier 2 , a second amplifier 3 , a Lange coupler 4 , two adjustable resistors 5 , 6 and two control circuits 7 , 8 .

[0019] The input terminal of the first amplifier 2 is connected to a millimeter-wave signal source to be amplified, which is not shown, and it can be located outside the semiconductor substrate 1 . The output of the amplifier 2 passes through the capacitor 9 and the first gate circuit 11 of the Lange coupler 1 connected. A Lange coupler consists of five parallel conductor lines 12 1 、12 2 ,...,12 5 . middle wire line 12 3 In Gate 11 1 and gates 11 located diagonally 3 A current connection is established between them. It passes through the air bridge 13 in the middle with the next adjacent slave gate circuit 11 1 or 11 3 Departure wire line 12 1 、12 5 connected. In wire line 12 3 Conductor lines extending on both sides 12 2 、...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A millimetric-wave amplifier arrangement comprises a first amplifier (2) whose output is connected to one input of the second amplifier (3) via an adjustable attenuator (4, 5, 6). Both amplifiers (2, 3) are integrated on a single substrate (1).

Description

technical field [0001] The invention relates to an amplifier system for high frequency signals in the millimeter wave range. Background technique [0002] Monolithically integrated millimeter-wave amplifiers are known in the form of one-stage and two-stage amplifiers, ie two single-stage amplifiers connected one behind the other on the same substrate. When amplification cannot be easily achieved with a single-stage amplifier, a two-stage amplifier is required. However, it has the disadvantage with respect to single-stage amplifiers that the level range over which a signal can be amplified with sufficient linearity is smaller than in a single-stage amplifier, because the signal amplified with good quality by a single-stage amplifier or the first stage of a two-stage amplifier, Levels that cause the second-stage amplifier to saturate can easily be reached. For applications where this risk exists, therefore, conventional hybrid circuits can be used, consisting of a first and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/195H01P1/22H01P5/18
CPCH01P1/22H03F3/195H01P5/186
Inventor G·格拉德S·克恩S·科赫
Owner TELEFON AB LM ERICSSON (PUBL)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com